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Autor Méndez Martín, Bianchi |
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Alonso Orts, Manuel ; Sánchez, A. M. ; López, I. ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | RSC Royal Society of Chemistry | 2017-11-07In this work, a simple thermal evaporation method has been used to obtain a variety of Ga?O?/SnO? nano-assemblies with different shapes and dimensionalities, which may affect their physical properties, especially those influenced by surface prop[...]texto impreso
Bruno, F. Y. ; Tornos, J. ; Gutierrez del Olmo, M. ; Sánchez Santolino, G. ; Nemes, N.M. ; Gárcia Hernández, M. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Antorrena, G. ; Morellon, L. ; De Teresa, J. M. ; Clement, M. ; Iborra, E. ; León, C. ; Santamaría Sánchez-Barriga, Jacobo | American Physical Society | 2011-06-23Metallic surface layers are fabricated by doping (100) SrTiO_3 (STO) single crystals with oxygen vacancies generated by bombardment with Ar ions from an rf plasma source. The presence of oxygen vacancies is confirmed by cathodoluminescence and x[...]texto impreso
Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Panin, G. N. ; Dutta, P. S. ; Dieguez, E. | I E E E | 1996Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different[...]texto impreso
A series of GaAs wafers with different doping levels and electrical resistivity has been used to investigate the scanning electron acoustic microscopy (SEAM) application to the characterization of this material. It has been found that SEAM is pa[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Elsevier Science BV | 2011-07Cathodoluminescence (CL) of Ga2O3 nanowires and planar microstructures has been studied in a scanning electron microscope, as a function of the orientation angle of the structures relative to the position of the light detection system in the mic[...]texto impreso
Nogales Díaz, Emilio ; Montone, A. ; Cardellini, F. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2002-12The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in c[...]texto impreso
Domínguez-Adame Acosta, Francisco ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; De Diego, N. ; LLopis, J. ; Moser, P. | Editions Physique | 1989-06Positron annihilation (PA) is a sensitive technique for detection of vacancy-type defects in crystals, that has been widely used in recent years to study defects in semiconductors (1). On the other side, CL and other luminescence techniques have[...]texto impreso
Sánchez, B ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Sirbu, L. ; Tiginyanu, I. ; M., I. ; Ursaki, V.V. | Springer Netherlands | 2008-01Porous GaP layers doped with erbium or europium elements have been obtained by electrochemical etching and further impregnation processes. The thermal treatments for optical activation of rare earth (RE) ions lead to partial oxidation of porous [...]texto impreso
Rams, J. ; Méndez Martín, Bianchi ; Craciun, G. ; Plugaru, R. ; Piqueras de Noriega, Javier | Amer Inst Physics | 1999-03-22An increase of the cathodoluminescence (CL) signal of porous silicon (PS) cracked in vacuum of up to three orders of magnitude has been achieved. Under high electron-beam currents, the samples cracked in interconnected pieces of tens of microns,[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2005-03-14ß-Ga_2O_3 nano- and microwires with diameters ranging from tens of nanometers to about one micron and lengths of up to tens of microns, have been obtained by sintering Ga_2O_3 powder under argon flow. The structures have been investigated by cat[...]texto impreso
Hidalgo Alcalde, Pedro ; Plaza, J. L. ; Méndez Martín, Bianchi ; Dieguez, E. ; Piqueras de Noriega, Javier | Institute of Physics | 2002-12-16The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the [...]texto impreso
Plugaru, R. ; Craciun, G. ; Nastase, N. ; Méndez Martín, Bianchi ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Nogales Díaz, Emilio | Kluwer Academic Publishers | 2000-01Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue e[...]texto impreso
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Plugaru, R. ; Craciun, G. ; Garcia, J. A. ; Remon, A. | Springer | 1999-03Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show a dominant band at 400 nm as well as a band centered at about 650 nm. CL spectra of [...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Craciun, G. ; Nastase, N. ; Cremades Rodríguez, Ana Isabel ; Nogales Díaz, Emilio | Trans Tech-Scitec Publications LTD | 1998Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As deposited films show visible luminescence with dominant blue band as well as a red band. The evolution of[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | Elsevier Science SA | 1996-12-15We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and[...]