Información del autor
Autor Piqueras de Noriega, Javier |
Documentos disponibles escritos por este autor (322)
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Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Golubev, VG. ; Kurdyukov, D.A. ; Pevtsov, A. B. | American Institute of Physics | 2001-10-01Synthetic opals infilled with silicon (opal-Si) and with Si and Pt (opal-Pt-Si) have been irradiated in a scanning electron microscope under high excitation conditions. Electron irradiation-induced changes in the morphology and luminescent defec[...]texto impreso
Cheze, C. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Corregidor, V. | natl Inst Optoelectronics | 2006-02Quaternary Ga_(1-x)In_xAs_ySb_(1-y) layers lattice matched to a GaSb substrate are of interest for applications in the infrared range. In this work, the luminescence of Ga_(1-x)In_xAs_ySb_(1-y) layers grown on GaSb by metal organic vapor phase e[...]texto impreso
Piqueras de Noriega, Javier ; Sotillo Buzarra, Belén ; Fernández Sánchez, Paloma | Elsevier Science SA | 2013-06-25Vapor–solid (VS) growth method at temperatures in the range from 1000 °C to 1200 °C has been used to obtain In doped ZnS micro- and nanostructures. The morphologies of the synthesized structures depend strongly on the deposition temperature, con[...]texto impreso
Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Lorenz, K. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. | IOP publishing ltd | 2011-07-15Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by[...]texto impreso
Pal, U ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. | Materials Research Soc | 1996texto impreso
Méndez Martín, Bianchi ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-10-30The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers [...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1996-05-15Planarization of large grain diamond films has been induced by 193 nm excimer laser irradiation. Secondary emission images and cathodoluminescence (CL) in the scanning electron microscope have been used to characterize-the irradiated area. Irrad[...]texto impreso
Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Abellá, M. ; Saucedo, E. ; Dieguez, E. | Springer | 2008-08Bi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi dope[...]texto impreso
Fernández, I. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | IOP publishing ltd | 2005-02In this work, the effect of different surface orientations on the defect structure of TiO2 single crystals and the evolution of the luminescence properties under plastic deformation are investigated by cathodoluminescence (CL) microscopy. The ma[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Xavier, C. ; Monteiro, T. ; Pereira, E. ; Meyer, B.K. ; Hofmann, D. M. ; Fischer, S. | American Institute of Physics | 1996-12-15GaN epitaxial layers have been investigated by cathodoluminescence (CL) in the scanning electron microscope (SEM). The most prominent feature of the spectra is a complex band at 2.2 eV, whose evolution with temperature and excitation density sug[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Sanchez, M. ; Piqueras de Noriega, Javier ; Golubev, VG. | Wiley-V C H Verlag Gmbh | 2003-01In this study, three-dimensional ordered synthetic opals formed by spheres of 230 nm impregnated with GaN have been investigated. In some of the samples gold and platinum were also introduced. The potential applications of GaN-opal assemblies in[...]texto impreso
Chioncel, M. F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Vincent, J. ; Bermudez, V. ; Dieguez, E. | Elsevier Science B.V. | 2004-07-15The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray micr[...]texto impreso
Nogales Díaz, Emilio ; Sánchez, B. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires hav[...]texto impreso
Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Muñoz, V. ; Bernardi, S. | Amer Inst Physics | 1997-11-24CdTe(100)/GaAs(100) and CdTe(lll)/CdTe(lll) layers grown by metalorganic vapor phase epitaxy (MOVPE) were investigated The layers were recrystallized to improve their morphology by scanning the surface with a 100 mu m diameter spot from an Ar io[...]texto impreso
Cathodoluminescence study of semiconductor oxide micro- and nanostructures grown by vapor deposition
Piqueras de Noriega, Javier ; Maestre Varea, David ; Ortega Mallén, Yolanda ; Cremades Rodríguez, Ana Isabel ; Fernández Sánchez, Paloma | Wiley-Blackwell | 2008-07starting SnO_2, powder. In-rich nanoislands were found to grow on some edges of the tubes. ZnO nanostructures doped with Sri or Eu were grown by adding SnO_2 and Eu(2)O(3) powder, respectively, to the ZnO precursor powder. All the samples have b[...]texto impreso
Iribarren, A. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Springer Netherlands | 2008-04Sintering of a mixture of TeO_2 and ZnO powders under an Ar flux leads to the formation of elongated Te-doped ZnO nano- and microstructures on the sample surface. The growth of the structures occurs via a vapour-solid process. Cathodoluminescenc[...]texto impreso
Panin, G. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Elsevier Science SA | 1996-12-15The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Vincent, J. ; Piqueras de Noriega, Javier ; Bermudez, V. ; Dieguez, E. | American Institute of Physics | 2005-01-15The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Ruiz, C. ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2005-07-25b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature [...]texto impreso
Pereira, L.. ; Pereira, E. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Jiménez, J. ; Bielza, J.M. | Elsevier Science SA | 1999-07Diamond and diamond-like films grown by the torch flame method have been analysed by different techniques, namely scanning electron microscopy, Raman spectroscopy, electron paramagnetic resonance and catholuminescence microscopy, in order to inv[...]texto impreso
Panin, G. N. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | Amer Inst Physics | 1998-04-21A correlative study of the electrically active defects of CdxHg1-xTe and CdTe crystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined system. Charged structural and compositional defect[...]texto impreso
Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier | American Institute of Physics | 1991-01-01Grain boundaries in GaP and InP have been studied by infrared cathodoluminescence (CL). In GaP the results indicate that there exists a depletion region beside grain boundaries where the concentration of P(Ga) antisite defects is lower than in t[...]texto impreso
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StorgardsStorgards, J. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Storgards, M. ; Dimroth, F. ; Bett, A.W. | Institute of Physics | 2004-06-21The luminescence of GaSb and AlGaSb layers grown on GaAs substrates by metal organic vapour phase epitaxy has been studied by means of cathodoluminescence (CL) rising a scanning electron microscope. CL plane-view analysis reveals a distribution [...]