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Autor Piqueras de Noriega, Javier |
Documentos disponibles escritos por este autor (322)
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Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | IOP publishing ltd | 2004-11Remote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide s[...]![]()
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Nogales Díaz, Emilio ; López, I. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. ; García, J.A. | Spie-Int Soc Optical Engineering | 2012Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoel[...]![]()
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Nogales Díaz, Emilio ; García, José Angel ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2007-09-24Er and Cr doped ß-Ga_2O_3 nano- and microwires have been grown by thermal treatments of Ga2O3 powder containing a fraction of Er_2O_3 powder or in the presence of Cr_2O_3 powder, respectively. Doping gives rise to the characteristic red photolum[...]![]()
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López, I. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2014Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channel[...]![]()
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. ; Dieguez, E. | Elsever science BV | 1999-03The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporati[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. ; Dieguez, E. | IOP publishing ltd | 1998-12GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentr[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]![]()
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Panin, G. N. ; Piqueras de Noriega, Javier ; Sochinskii, N. ; Dieguez, E. | Amer Inst Physics | 1997-02-17The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]![]()
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Panin, G. N. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | IOP publishing ltd | 1996-09The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra [...]![]()
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Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1999-01-15Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observati[...]![]()
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Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Urbieta Quiroga, Ana Irene ; Rebane, Y. T. ; Shreter, Y. G. | Trans Tech-Scitec Publications LDT | 1998The electronic recombination properties of defects in ZnSe is a subject of interest related to the application of this material in optoelectronic devices operating in the blue-green range. In this work the influence of defects, in particular the[...]![]()
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Maestre Varea, David ; Plugaru, R ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Materials Research Society | 2003The luminescence of titanium oxide and tin oxide has been investigated by cathodoluminescence in the SEM, as a function of the structural changes induced by thermal treatments. The evolution of the luminescence of TiO2 rutile, anatase and mixtur[...]![]()
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Cristian Vasquez, G. ; Andrea Peche-Herrero, M. ; Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Ramirez-Castellanos, Julio ; María Gonzalez-Calbe, José ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2013-01-31Rutile TiO_2 nanoparticles doped with V, Cr, or Mn ions have been synthesized via a modified Pechini method using polymeric precursors. The final particle sizes range between 20 and 500 nm depending on the selected dopant. The TiO_2 rutile phase[...]![]()
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. | Elsevier Science SA | 2001-04-24In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial[...]![]()
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Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12-16The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness stro[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]![]()
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Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | American Institute of Physics | 1999-08-15A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectros[...]![]()
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Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Stutzmann, M. ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The di[...]![]()
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Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Stutzmann, M. ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The di[...]![]()
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Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Tomashpolsky, Y. Y. ; Sadovskaya, N. V. ; Opagiste, C. | IOP publishing ltd | 1996-09Tl_2Ba-2CuO_(6+?) ceramics have been irradiated in a scanning electron microscope. The resultant changes in the cationic stoichiometry and oxygen content of the samples were investigated by cathodoluminescence (CL), secondary electron emission ([...]![]()
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Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | American Institute of Physics | 1999-02-01In the present work, electron beam induced current (EBIC) has been applied to characterize several kinds of chemical vapor deposition diamond films. Regions of enhanced carrier recombination are detected in plan-view observations of thin films a[...]![]()
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Panin, G. N. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 1998-06A combined scanning electron microscope-scanning tunnelling microscope (SEM-STM) system has been used to characterize CdxHg1-xTe and CdTe crystals, The electron beam induced current (EBIC) mode of the SEM shows the existence of inhomogeneities i[...]![]()
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Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Schreck, M. | Elsevier Science SA | 1997-01Electron beam-induced current (EBIC) is applied to the characterization of chemical vapor-deposited (CVD) diamond films. EBIC contrast shows a strong dependence on the orientation of grains relative to the incident electron beam. This is due to [...]