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Autor Piqueras de Noriega, Javier |
Documentos disponibles escritos por este autor (322)
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Maestre Varea, David ; Martínez Velasco, I. ; Cremades Rodríguez, Ana Isabel ; Amati, M. ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2010-07-15Mn-doped In(2)O(3) nanopyramids have been grown by a catalyst-free thermal process at 700 degrees C using InN and Mn(2)O(3) powders as precursors. Energy dispersive spectroscopy, as well as X-ray photoelectron spectroscopy, demonstrate the prese[...]![]()
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Cebriano Ramírez, Teresa ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Elsevier Science SA | 2012-08-15Sb_2O_3 micro- and nanostructures of the face centered cubic phase, have been grown by a catalyst free evaporation deposition method with powder of metallic Sb as precursor. Nanopyramids, octahedra and nanorods are the building blocks of complex[...]![]()
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Pereira, L. ; Pereira, E. ; Gomes, H. ; Rodrigues, A. ; Rees, A. ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Elsevier Science SA | 2000-04The properties of microelectrical conduction in microwave plasma assisted chemical vapour deposition (MPCVD) diamond films were investigated using an atomic force microscopy probe, giving a morphological map of the electrical conduction with a s[...]![]()
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Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1997-12-15We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd0.8Zn0.2Te. In order to understand the role such d[...]![]()
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Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, J. M. ; Nó, M. L. ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Amer Physical Soc | 2018-06-07Optical microcavities are key elements in many photonic devices, and those based on distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for higher quality factors and finesse values. Besides, they allow for wi[...]![]()
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Maestre Varea, David ; Haeussler, Dietrich ; Cremades Rodríguez, Ana Isabel ; Jaeger, Wolfgang ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2011-04In_2O_3 nanorods have been grown by a catalyst free evaporation-deposition method. Transmission electron microscopy (TEM) investigations reveal that the rods contain tubular cavities, herein referred to as "nanopipes", along the total length of [...]![]()
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Urbieta Quiroga, Ana Irene ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Vasco, E. ; Zaldo, C. | natl Inst Optoelectronics | 2004-03Scanning tunnelling microscopy and spectroscopy have been used to characterize electrically active grain boundaries in pulsed laser deposited ZnO films with grain sizes in the range 216-500 nm. The p-type behaviour at the boundary is evidenced b[...]![]()
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Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Urbieta Quiroga, Ana Irene | Elsevier Science SA | 2012-02-15Mn doped ZnO nano- and microstructures have grown by a catalyst free evaporation-deposition method. Different morphologies such as nanowires, nanorods and stacks of nanoplates with a skewer arrangement around a central rod, have been obtained. S[...]![]()
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Dutta, P. S. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. ; Bhat, H. L. | Amer Inst Physics | 1996-07-15Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundame[...]![]()
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The contactless modulation spectroscopy technique of photoreflectance (PR) has been used to study the near band edge transitions in CdTe, CdTe:V and CdTe:Ge bulk crystals in the range of 14 and 400 K for the first time. The lineshape of the PR[...]![]()
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Nogales Díaz, Emilio ; Joachimsthaler, I. ; Heiderhoff, R. ; Piqueras de Noriega, Javier ; Balk, L.J. | American Institute of Physics | 2002-07-15Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority [...]![]()
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Piqueras de Noriega, Javier ; Vila Santos, María ; Díaz-Guerra Viejo, Carlos | IOP publishing ltd | 2010-04-07CuO nanostructures with different morphologies, such as single-crystal nanowires, nanoribbons and nanorods, have been grown by thermal oxidation of copper in the 380–900?°C temperature range. Cathodoluminescence spectra of the nanostructures sho[...]![]()
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Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Ulloa, J.M. ; Piqueras de Noriega, Javier ; Strunk, H.P. ; Hanser, D. ; Davis, R. F. | Materials Research Society | 2000A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical propertie[...]![]()
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Herrera Zaldiva, M. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sukhoveyev, W. ; Ivantsov, V. A. ; Shreter, Y. G. | Springer | 2000-07Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has [...]![]()
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Vásquez, G. C. ; Karazhanov, S. Zh. ; Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Foss, S. E. | American Physical Society | 2016-11-23The effects of doubly ionized oxygen vacancies [(V_O)ˆ(2+)]on the electronic structure and charge distribution in rutile TiO_2 are studied by combining first-principles calculations based on density functional theory and experimental results fro[...]![]()
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Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]![]()
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Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]![]()
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Monteiro, T. ; Pereira, E. ; Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier | Electrochemical Soc Inc | 1993-12Time resolved photoluminescence (TRPL) of untreated and heat-treated n-type GaP:S samples has been investigated and compared with data from cathodoluminescence in a scanning electron microscope (CL-SEM). Special attention is given to broad emiss[...]![]()
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2000-02-14In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis ha[...]![]()
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Monaico, E. ; Ursaki, V. V. ; Urbieta Quiroga, Ana Irene ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Boyd, R. W. ; Tiginyanu, I. M. | IOP publishing ltd | 2004-12Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ. UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretchin[...]![]()
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Fernández Sánchez, Paloma ; Solís, J. ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2000-09Pulsed laser treatments in air and in vacuum have been performed in CdTe wafers. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Remarkable differences between the ef[...]![]()
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Gonzalo, A. ; Nogales Díaz, Emilio ; Lorenz, K. ; Víllora, E. G. ; Shimamura, K: ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Elsevier Science BV | 2017-11The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga?O? nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achie[...]![]()
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Iribarren, A. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2014-03Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influen[...]![]()
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Nogales Díaz, Emilio ; García, José A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | American Institute of Physics | 2007-02-01Red luminescence emission from chromium doped ß-Ga_2O_3 nanowires has been studied by means of photoluminescence (PL) techniques. PL excitation shows several bands in the ultraviolet-visible region. Time decay values, obtained by time resolved P[...]