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Autor Piqueras de Noriega, Javier |
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Nogales Díaz, Emilio ; Joachimsthaler, I. ; Heiderhoff, R. ; Piqueras de Noriega, Javier ; Balk, L.J. | American Institute of Physics | 2002-07-15Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority [...]texto impreso
Piqueras de Noriega, Javier ; Vila Santos, María ; Díaz-Guerra Viejo, Carlos | IOP publishing ltd | 2010-04-07CuO nanostructures with different morphologies, such as single-crystal nanowires, nanoribbons and nanorods, have been grown by thermal oxidation of copper in the 380–900?°C temperature range. Cathodoluminescence spectra of the nanostructures sho[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Ulloa, J.M. ; Piqueras de Noriega, Javier ; Strunk, H.P. ; Hanser, D. ; Davis, R. F. | Materials Research Society | 2000A series of 100 nm thick InGaN films with In content up to 14% has been grown by MOVPE on SiC substrates. Optical characterization was carried out by means of reflectance spectrometry, photoluminescence and cathodoluminescence. Optical propertie[...]texto impreso
Herrera Zaldiva, M. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sukhoveyev, W. ; Ivantsov, V. A. ; Shreter, Y. G. | Springer | 2000-07Cathodoluminescence (CL) in the scanning electron microscope has been applied to study the luminescence emission of GaN single crystals grown by LPE methods. CL spectra show the presence of near band edge and of yellow emissions. The latter has [...]texto impreso
Vásquez, G. C. ; Karazhanov, S. Zh. ; Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Foss, S. E. | American Physical Society | 2016-11-23The effects of doubly ionized oxygen vacancies [(V_O)ˆ(2+)]on the electronic structure and charge distribution in rutile TiO_2 are studied by combining first-principles calculations based on density functional theory and experimental results fro[...]texto impreso
Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]texto impreso
Monteiro, T. ; Pereira, E. ; Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier | Electrochemical Soc Inc | 1993-12Time resolved photoluminescence (TRPL) of untreated and heat-treated n-type GaP:S samples has been investigated and compared with data from cathodoluminescence in a scanning electron microscope (CL-SEM). Special attention is given to broad emiss[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2000-02-14In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis ha[...]texto impreso
Monaico, E. ; Ursaki, V. V. ; Urbieta Quiroga, Ana Irene ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Boyd, R. W. ; Tiginyanu, I. M. | IOP publishing ltd | 2004-12Porous CdSe layers have been produced by anodic etching of crystalline substrates in a HCl solution. Anodization under in situ. UV illumination resulted in the formation of uniformly distributed parallel pores with a diameter of 30 nm, stretchin[...]texto impreso
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Fernández Sánchez, Paloma ; Solís, J. ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2000-09Pulsed laser treatments in air and in vacuum have been performed in CdTe wafers. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Remarkable differences between the ef[...]texto impreso
Gonzalo, A. ; Nogales Díaz, Emilio ; Lorenz, K. ; Víllora, E. G. ; Shimamura, K: ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Elsevier Science BV | 2017-11The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga?O? nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achie[...]texto impreso
Iribarren, A. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2014-03Cathodoluminescence (CL) of Te doped elongated ZnO microstructures obtained by a vapour-solid (V-S) technique has been investigated. The CL intensity changes along the microstructures axis are related to the gradient of Te content, which influen[...]texto impreso
Nogales Díaz, Emilio ; García, José A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | American Institute of Physics | 2007-02-01Red luminescence emission from chromium doped ß-Ga_2O_3 nanowires has been studied by means of photoluminescence (PL) techniques. PL excitation shows several bands in the ultraviolet-visible region. Time decay values, obtained by time resolved P[...]