Información del autor
Autor Piqueras de Noriega, Javier |
Documentos disponibles escritos por este autor (322)
![](./images/expand_all.gif)
![](./images/collapse_all.gif)
![]()
texto impreso
Cavallini, A. ; Dupasquier, A. ; Ferro, G. ; Piqueras de Noriega, Javier ; Valli, M. | Trans Tech Publications Ltd | 1997The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most pr[...]![]()
texto impreso
Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier ; De Diego, N. ; LLopis, J. | American Institute of Physics | 1988-04-15Cathodoluminescencescanning electron microscopy and positron annihilation techniques have been used to investigate the distribution of defects in GaP wafers. The results show the existence of a gradient of the concentration of vacancy?type defec[...]![]()
texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Popa, V. ; Cojocaru, A. ; Tiginyanu, M. | Amer Inst Physics | 2005-05-30The emission properties of GaN nanostructures created by photoelectrochemical etching have been investigated by cathodoluminescence (CL) in the scanning electron microscope. Columnar structures with diameters of 150-250 nm formed near the surfac[...]![]()
texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R. | Materials Research Society | 2003Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrume[...]![]()
texto impreso
Díaz-Guerra Viejo, Carlos ; Chioncel, M. ; Piqueras de Noriega, Javier | Academic Press LTD-Elsevier Science LTD | 2009-04Nanostructures of two transition metal oxides, WO(3) and ?-Fe_2O_3, have been grown by a thermal deposition method without a catalyst and characterized by x-ray diffraction, scanning electron microscopy (SEM), high-resolution transmission electr[...]![]()
texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | American Institute of Physics | 2007-10-15V_2O_5 nanostructures have been grown on 4H-SiC and Si substrates by a thermal deposition method without a catalyst. High aspect ratio nanowires with rectangular cross sections were grown on 4H-SiC. High-resolution transmission electron microsco[...]![]()
texto impreso
Díaz-Guerra Viejo, Carlos ; Montone, A. ; Piqueras de Noriega, Javier ; Cardellini, F. | IOP publishing ltd | 2002-01The structural and luminescent properties of nanocrystalline silicon produced by high-energy ball milling of Si single crystals have been investigated using transmission electron microscopy (TEM), x-ray diffraction (XRD) and cathodoluminescence [...]![]()
texto impreso
Tomashpolskii, Y. Y. ; Sadovskaya, N. V. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Opagiste, C. | Amer Inst Physics | 1997-03The structural changes and the cation and anion compositions of the surface of superconducting YBa_2Cu_3O_(7-x) and Tl_2Ba_2CuO_(6+x) ceramics after local irradiation for several seconds by an electron probe with an accelerating voltage of 25 kV[...]![]()
texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]![]()
texto impreso
A series of 100 nm thick InGaN films with Indium content up to 14% has been grown by MOVPE on SiC substrates. Cathodoluminescence (CL) and remote electron beam induced current (REBIC) in the scanning electron microscope have been applied to inve[...]![]()
texto impreso
![]()
texto impreso
The effect of Cl doping on the luminescence properties of CdTe is investigated by cathodoluminescence microscopy. Cl enhances the 1.4 eV emission and retards the appearance of the tellurium vacancy related emission band. The behaviour under anne[...]![]()
texto impreso
Cremades Rodríguez, Ana Isabel ; Domínguez-Adame Acosta, Francisco ; Piqueras de Noriega, Javier | American Institute of Physics | 1993-11-01Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the colum[...]![]()
texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-03-01Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations[...]![]()
texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Cavallini, A. ; Fraboni, B. | Elsevier Science SA Lausanne | 1994-05Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been inv[...]