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Autor Piqueras de Noriega, Javier |
Documentos disponibles escritos por este autor (322)
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. ; Dieguez, E. | Elsever science BV | 1999-03The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporati[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. ; Dieguez, E. | IOP publishing ltd | 1998-12GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentr[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]![]()
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Panin, G. N. ; Piqueras de Noriega, Javier ; Sochinskii, N. ; Dieguez, E. | Amer Inst Physics | 1997-02-17The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending[...]![]()
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]![]()
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Panin, G. N. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | IOP publishing ltd | 1996-09The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra [...]![]()
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Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1999-01-15Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observati[...]![]()
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Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Urbieta Quiroga, Ana Irene ; Rebane, Y. T. ; Shreter, Y. G. | Trans Tech-Scitec Publications LDT | 1998The electronic recombination properties of defects in ZnSe is a subject of interest related to the application of this material in optoelectronic devices operating in the blue-green range. In this work the influence of defects, in particular the[...]![]()
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Maestre Varea, David ; Plugaru, R ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | Materials Research Society | 2003The luminescence of titanium oxide and tin oxide has been investigated by cathodoluminescence in the SEM, as a function of the structural changes induced by thermal treatments. The evolution of the luminescence of TiO2 rutile, anatase and mixtur[...]![]()
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Cristian Vasquez, G. ; Andrea Peche-Herrero, M. ; Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Ramirez-Castellanos, Julio ; María Gonzalez-Calbe, José ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2013-01-31Rutile TiO_2 nanoparticles doped with V, Cr, or Mn ions have been synthesized via a modified Pechini method using polymeric precursors. The final particle sizes range between 20 and 500 nm depending on the selected dopant. The TiO_2 rutile phase[...]![]()
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. | Elsevier Science SA | 2001-04-24In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial[...]![]()
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Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12-16The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness stro[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]![]()
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Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | American Institute of Physics | 1999-08-15A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectros[...]![]()
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Herrera, M. ; Cremades Rodríguez, Ana Isabel ; Stutzmann, M. ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Mn doped GaN films have been studied by conductive Atomic Force Microscopy (AFM), Cathodoluminescence (CL) and Electron Beam Induced Current (EBIC). AFM measurements revealed the presence of pinholes with diameters between 130 and 380 nm. The di[...]