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Autor Hidalgo Alcalde, Pedro |
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]texto impreso
Cepeda Jiménez, C. M. ; Hidalgo Alcalde, Pedro ; Pozuelo, M. ; Ruano, O. A ; Carreño, F. | Elsevier Science SA | 2010-04-25The microstructure and mechanical properties in the interface region of a multilayer composite laminate based on Al-Zn (Al 7075) and Al-Cu (Al 2024) alloys have been mainly characterized by EBSD and shear tests. It is shown that varying solution[...]texto impreso
Zn_2GeO_4 is a novel transparent conductive oxide material, with an ultra-wide band gap of 4.5 eV, and rather good electrical conductivity. Zn_2GeO_4 nano-and microwires grown by a thermal technique show two intense emission bands centered in t[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. | Elsevier Science SA | 2001-04-24In this work pure and Gd-doped GaSb ingots with different dopant concentrations were grown by the Bridgman Method. The compositional and electrical analysis carried out on these materials have shown the dependence of these results on the initial[...]texto impreso
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Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Dieguez, E. | Sociedad Española de Cerámica y Vidrio | 2000-07En este trabajo se ha realizado el estudio de cristales de GaSb crecidos por el método Bridgman y dopados con Er y Nd con distintas concentraciones. Se han realizado análisis de absorción atómica pudiéndose obtener el coeficiente de segregación [...]texto impreso
FeB and CrB pair reassociation kinetics in imperfect Si controlled by contactless lifetime scan maps
The kinetics of "metal-acceptor" pairing in boron-doped multicrystalline samples are investigated by means of contactless lifetime measurement. The case of FeB and CrB pairs is discussed and the influence of extended defect is evidenced for FeB.[...]texto impreso
López, Iñaki ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2012-01The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined fo[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2005-11Thermal treatment of compacted GeO_2 powder under argon flow leads to the growth of a dense distribution of microwires and nanowires on the sample surface. Extended treatment causes the formation of more complex structures, including arrays of n[...]texto impreso
Hidalgo Alcalde, Pedro ; Liberti, Emanuela ; Rodriguez lazcano, Yamilet ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2009-10-01GeO_2 nanowires doped with Eu, Er, or Mn, as well as codoped with each of these ions and Sri, have been grown by a catalyst-free vapor-solid process. The incorporation of Sri has been found, in all cases, to favor the formation of straight wires[...]texto impreso
Sochinskii, N. V. ; Saucedo, E. ; Abellan, M. ; Rodríguez Fernández, José ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Ruiz, C.M. ; Bermudez, V. ; Dieguez, E. | Elsevier Science BV | 2008-04Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were [...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentr[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concent[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2007-04-18High aspect ratio GeO_2 nano- and microwires have been grown by thermal treatment at 600 degrees C of compacted Ge powder under argon flow. The wires have cross-sectional dimensions from less than 100 nm to about 1 mu m, depending on the duratio[...]