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Autor Hidalgo Alcalde, Pedro |
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Clericò, Vito ; Delgado Notario, J. A. ; Saiz Bretín, Marta ; Malyshev, Andrey ; Meziani, Y. M. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Amado, M. ; Domínguez Adame Acosta, Francisco ; Díaz Fernández, Enrique | Nature Publishing Group | 2019-09-19We report on a novel implementation of the cryo-etching method, which enabled us to fabricate low-roughness hBN-encapsulated graphene nanoconstrictions with unprecedented control of the structure edges; the typical edge roughness is on the order[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | American Physical Society | 1999-10-15V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial re[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | American Institute of Physics | 1999-08-01Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has bee[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2008-11-12Sn doped GeO_2 nanowires and microwires have been grown by an evaporation-deposition method, using a mixture of Ge and SnO_2 powders as precursors. Comparison with undoped GeO_2 nanowires grown by the same method shows that the presence of Sn pr[...]texto impreso
This paper presents cathodoluminescence, electrical and structural characteristics of (11-20)-oriented 4H-SiC substrates, aiming at determining properties of some extended defects. As-grown basal plane dislocations with the Burgers vector b = 1/[...]texto impreso
Hidalgo Alcalde, Pedro ; Ottaviani, L. ; Idrissi, H. ; Lancin, M. ; Martinuzzi, S. ; Pichaud, B. | E D P Sciences | 2004-07Silicon Carbide (SiC) is a wide band gap semiconductor, having opto-electronic properties that are suitable for many applications. Some structural defects due to crystal growth and/or doping technologies are commonly present in the substrates of[...]texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. | Materials Research Society | 2000GaSb p-n junctions formed by Zn diffusion in Te-doped n-GaSb single crystalline wafers have been characterized by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. CL plane-view observations of the Zn diffused side enab[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2002-04-30The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been a[...]texto impreso
Maestre Varea, David ; Ramírez Castellanos, Julio ; Hidalgo Alcalde, Pedro ; Cremades Rodríguez, Ana Isabel ; Gónzalez Calbet, J.M. ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2007-04The defect structure of sintered SnO_2 was investigated by high-resolution transmission electron microscopy (HRTEM), cathodoluminescence (CL), and electrical measurements. HRTEM shows the presence of the SnO phase in the sintered samples as well[...]texto impreso
Crocco, J. ; Bensalah, H. ; Zheng, Q. ; Dierre, F. ; Hidalgo Alcalde, Pedro ; Carrascal, J. ; Vela, O. ; Piqueras de Noriega, Javier ; Dieguez, E. | IEEE-Inst Electrical Electronics Engineers Inc | 2011-08The Vertical Gradient Freeze (VGF) method has been used to grow high resistivity Cadmium Zinc Telluride (CZT) for high energy radiation applications. In this work, the effect of lapping and polishing the lateral edges of planar detectors is stud[...]texto impreso
Ramos, A. ; Urbieta Quiroga, Ana Irene ; Escalante, G. ; Hidalgo Alcalde, Pedro ; Espinós, J.P. ; Fernández Sánchez, Paloma | Elsevier | 2020-04-15The properties of ZnO based materials for ethanol detection have been studied. Cu doped samples obtained from different precursors have been investigated. ZnO and ZnS have been used as host and Cu and CuO as dopant sources. The sensing measureme[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. | Elsevier Science SA | 2001-03-22We report here the studies carried out in zinc diffused n-type GaSb by cathodoluminescence (CL) microscopy and by scanning tunneling spectroscopy. Samples with different diffusion profiles measured by secondary ion mass spectrometry (SIMS) were [...]texto impreso
The scope of this paper is to analyse the effect of Au and Cr impurities, diffused onto GaSb substrates on the formation of nanodots created by LEIS using Ar+ ions It is concluded that oblique incidence in rotating configuration delays the forma[...]