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Autor Nogales Díaz, Emilio |
Documentos disponibles escritos por este autor (55)
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Alonso Orts, Manuel ; Sánchez, A. M. ; López, I. ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | RSC Royal Society of Chemistry | 2017-11-07In this work, a simple thermal evaporation method has been used to obtain a variety of Ga?O?/SnO? nano-assemblies with different shapes and dimensionalities, which may affect their physical properties, especially those influenced by surface prop[...]![]()
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Fernández Sánchez, Paloma ; Díaz-Guerra Viejo, Carlos ; López García, María Luisa ; Urbieta Quiroga, Ana Irene ; Nogales Díaz, Emilio ; Arias Velasco, Marta ; Romero Izquierdo, Carlos ; Solís Fernández, Fernando ; Sotillo Buzarra, Belén | 2019-10-31El presente proyecto aborda dos aspectos muy importantes y estrechamente ligados a la adquisición de competencias básicas de cualquier titulación de grado actual y altamente demandadas por los empleadores: la adquisición de habilidades para desa[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Elsevier Science BV | 2011-07Cathodoluminescence (CL) of Ga2O3 nanowires and planar microstructures has been studied in a scanning electron microscope, as a function of the orientation angle of the structures relative to the position of the light detection system in the mic[...]![]()
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Nogales Díaz, Emilio ; Montone, A. ; Cardellini, F. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2002-12The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in c[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2005-03-14ß-Ga_2O_3 nano- and microwires with diameters ranging from tens of nanometers to about one micron and lengths of up to tens of microns, have been obtained by sintering Ga_2O_3 powder under argon flow. The structures have been investigated by cat[...]![]()
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Plugaru, R. ; Craciun, G. ; Nastase, N. ; Méndez Martín, Bianchi ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Nogales Díaz, Emilio | Kluwer Academic Publishers | 2000-01Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue e[...]![]()
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Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Craciun, G. ; Nastase, N. ; Cremades Rodríguez, Ana Isabel ; Nogales Díaz, Emilio | Trans Tech-Scitec Publications LTD | 1998Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As deposited films show visible luminescence with dominant blue band as well as a red band. The evolution of[...]![]()
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Wang, K. ; Martin, R. W. ; Nogales Díaz, Emilio ; Edwards, P. R. ; O’Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Watson, I. M. | American Institute of Physics | 2006-09-25AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broade[...]![]()
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Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Lorenz, K. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. | IOP publishing ltd | 2011-07-15Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by[...]![]()
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Nogales Díaz, Emilio ; Sánchez, B. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires hav[...]![]()
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Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in [...]![]()
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Martínez Criado, Gema ; Segura Ruiz, Jaime ; Manh-Hung, Chu ; Tucoulou, Remi ; López García, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2014-10Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local struct[...]![]()
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Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Rigby, Oliver M. ; Stamp, Alice V. ; Hindmarsh, Steve A. ; Sánchez, Ana M. | IOP Publishing | 2019-02-01beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around [...]![]()
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Nogales Díaz, Emilio ; López, I. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. ; García, J.A. | Spie-Int Soc Optical Engineering | 2012Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoel[...]![]()
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Nogales Díaz, Emilio ; García, José Angel ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2007-09-24Er and Cr doped ß-Ga_2O_3 nano- and microwires have been grown by thermal treatments of Ga2O3 powder containing a fraction of Er_2O_3 powder or in the presence of Cr_2O_3 powder, respectively. Doping gives rise to the characteristic red photolum[...]![]()
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López, I. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2014Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channel[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]![]()
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Catarino, N. ; Nogales Díaz, Emilio ; Franco, N. ; Darakchieva, V. ; Miranda, S.M.C. ; Méndez Martín, Bianchi ; Alves, E. ; Marques, J.F. ; Lorenz, K. | EPL Association, European Physical Society | 2012-03The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, [...]![]()
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Peres, M. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Lorenz, K. ; Correira, M. R. ; Monteiro, T. ; Sedrine, N. Ben | Electrochemical Society | 2019-03-06In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural an[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Garcia, J. A. | IOP publishing ltd | 2009-03-18Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used [...]![]()
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Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, José M. ; Nó, Maria L. ; Méndez Martín, Bianchi | SPIE | 2019On one hand, interest on the tunability of the optical microcavities has increased in the last few years due to the need for selective nano-and microscale light sources to be used as photonic building blocks in several applications. On the other[...]![]()
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Nogales Díaz, Emilio ; Martin, R. V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2006-01-16The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps pr[...]![]()
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López, Iñaki ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2012-01The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined fo[...]![]()
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López, I. ; Castaldini, A. ; Cavallini, A. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2014-10-15The behaviour of ß-Ga?O? nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium [...]![]()
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In-doped gallium oxide micro- and nanostructures: morphology, structure, and luminescence properties
López, Iñaki ; Utrilla, Antonio D. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez Castellanos, J. ; González Calbet, José M. | Amer Chemical Soc | 2012-02-16The influence of indium doping on morphology, structural, and luminescence properties of gallium oxide micro- and nanostructures is reported. Indium-doped gallium oxide micro- and nanostructures have been grown by thermal oxidation of metallic g[...]