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Autor Nogales Díaz, Emilio |
Documentos disponibles escritos por este autor (55)
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Faye, D. Nd. ; Biquard, X. ; Nogales Díaz, Emilio ; Felizardo, M. ; Peres, M. ; Redondo Cubero, A. ; Auzelle, T. ; Daudin, B. ; Tizei, L.H.G ; Méndez Martín, Bianchi | American Chemical Society | 2019-05-09Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks [...]![]()
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Gonzalo, Alicia ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2014-02Mn doped –Ga_2O_3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 ºC. The morphology of the resulting structures has been found to depend on[...]![]()
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López, I ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2016-11Gallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SE[...]![]()
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López, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez-Castellanos, Julio ; Gonzalez-Calbet, José M. | Amer Chemical Soc | 2013-02-14Elongated micro- and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium oxide have been grown by a thermal method. The presence of Sn during growth has been shown to strongly influence the morphology of the resulting structures, [...]![]()
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Lorenz, K. ; Nogales Díaz, Emilio ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R.W. ; O`Donnell, K.P. | Materials Research Soc | 2006GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ?C in vacuum, in flowing nitrogen gas or a mixture of NH? and N?. Rutherford backscattering spectrometry in the channeling mode was use[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Garcia, J. A. ; Tate, T. J. | Materials Research Society | 2002The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of [...]![]()
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Peres, Marco ; Fernandes, A.J.S. ; Oliveira, F.J. ; Alves, L.C. ; Alves, E. ; Monteiro, T.S. ; Cardoso, S. ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi | Electrochemical Society | 2019-06-24A thermal actuator based on thin flexible lamellas of Ga_2O_3 was designed in order to demonstrate the potential of this semiconductor for micro-opto-electro-mechanical applications (MOEMs). The working principle of these devices is based on the[...]![]()
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Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, J. M. ; Nó, M. L. ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Amer Physical Soc | 2018-06-07Optical microcavities are key elements in many photonic devices, and those based on distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for higher quality factors and finesse values. Besides, they allow for wi[...]![]()
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Nogales Díaz, Emilio ; Joachimsthaler, I. ; Heiderhoff, R. ; Piqueras de Noriega, Javier ; Balk, L.J. | American Institute of Physics | 2002-07-15Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority [...]![]()
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Alonso Orts, Manuel ; Chilla, Gerwin ; Hötzel, Rudolfo ; Nogales Díaz, Emilio ; San Juan, José M. ; Nó, Maria L. ; Eickhoff, Martin ; Méndez Martín, Bianchi | Optical Society of America | 2021-01-15In this Letter, we report optical confinement in the near-ultraviolet (near-UV) range in Ga2O3 nanowires (NWs) by distributed Bragg reflector (DBR) nanopatterned cavities. High-contrast DBRs, which act as the end mirrors of the cavities of the d[...]![]()
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García Fernández, Javier ; García Carrión, Marina ; Torres Pardo, Almudena ; Martínez Casado, Ruth ; Ramírez Castellanos, Julio ; Nogales Díaz, Emilio ; González Calbet, José María ; Méndez Martín, Bianchi | Royal Society of Chemistry | 2020-02-28Herein, we achieve the synthesis and structural study of a luminescent Na-stabilized Ga-Ti oxide homologous series by atomically resolved electron microscopy. Relevant optical properties as a function of the titanium content have been revealed. [...]![]()
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Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with stru[...]![]()
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Rodrigues, Joana ; Smazna, Daria ; Ben Sedrine, Nabiha ; Nogales Díaz, Emilio ; Adelung, Rainer ; Mishra, Yogendra K ; Méndez Martín, Bianchi ; Correia, María R. ; Monteiro, Teresa | Royal Society Chemistry | 2019-04-01ZnO microwires synthesised by the flame transport method and decorated with C_60 clusters were studied in detail by photoluminescence (PL) and cathodoluminescence (CL) techniques. The optical investigations suggest that the enhanced near band ed[...]![]()
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Gonzalo, A. ; Nogales Díaz, Emilio ; Lorenz, K. ; Víllora, E. G. ; Shimamura, K: ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Elsevier Science BV | 2017-11The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga?O? nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achie[...]![]()
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Nogales Díaz, Emilio ; García, José A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | American Institute of Physics | 2007-02-01Red luminescence emission from chromium doped ß-Ga_2O_3 nanowires has been studied by means of photoluminescence (PL) techniques. PL excitation shows several bands in the ultraviolet-visible region. Time decay values, obtained by time resolved P[...]![]()
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Fabry Perot resonant modes in the optical range 660-770 nm have been detected from single and coupled Cr doped gallium oxide microwires at room temperature. The luminescence is due to chromium ions and dominated by the broad band involving the T[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2001-09Scanning tunnelling microscopy (STM) has been sometimes applied in recent years to characterize porous silicon. In contrast, other forms of light emitting Si, such as nanocrystalline silicon films, prepared by different methods, have not been, o[...]![]()
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Wang, K. ; Martin, R. W. ; O’Donnell, K. P. ; Katchkanov, V. ; Nogales Díaz, Emilio ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2005-09-12The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescen[...]![]()
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Alonso Orts, Manuel ; Sanchez, Ana M ; Hindmarsh, Steven A ; López, Iñaki ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Amer Chemical Soc | 2017-01-11Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO_2/Ga_2O_3 complex nanost[...]![]()
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O'Donnell, KP ; Katchkanova, V. ; Wang, K. ; Martin, R.W. ; Edwards, P.R. ; Hourahine, B. ; Nogales Díaz, Emilio ; Mosselmans, J.F.W. ; De Vries, B. | Materials Research Society | 2005This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether[...]![]()
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Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R. | Materials Research Society | 2003Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrume[...]![]()
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López, Iñaqui ; Lorenz, K. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. ; Garcia, J. A. | Springer | 2014-02A systematical analysis of the correlation between the crystalline quality and the luminescence of rare-earth-implanted ß-Ga_2O_3 nanostructures with potential applications in visible and ultraviolet photonics is presented. Europium ions led to [...]![]()
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Diaz, Joquín ; López, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Springer | 2011-05Silicon-doped gallium oxide nanowires have been synthesized by thermal methods using either a mixture of gallium oxide and silicon powders or metallic gallium with silicon powder as precursor materials. The growth mechanism has been found to be [...]![]()
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Méndez Martín, Bianchi ; López, I. ; Alonso Orts, Manuel ; Sanz, A. ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2017-05-30The synthesis of complex nanostructures that combine materials and dimensionality, promises the ability to identify novel designs and architectures with enhanced properties that could be used in new devices. One of the building blocks in nanomat[...]![]()
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López García, Iñaki ; Cebriano Ramírez, Teresa ; Hidalgo Alcalde, Pedro ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | American Institute of Materials Science (AIMS) | 2016A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga_2O_3, GeO_2 or Sb_2O_3, among others, and some ternary oxide compounds (ZnGa_2O_4, Zn[...]