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Autor Nogales Díaz, Emilio |
Documentos disponibles escritos por este autor (55)
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Alonso Orts, Manuel ; Sánchez, A. M. ; López, I. ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | RSC Royal Society of Chemistry | 2017-11-07In this work, a simple thermal evaporation method has been used to obtain a variety of Ga?O?/SnO? nano-assemblies with different shapes and dimensionalities, which may affect their physical properties, especially those influenced by surface prop[...]texto impreso
Fernández Sánchez, Paloma ; Díaz-Guerra Viejo, Carlos ; López García, María Luisa ; Urbieta Quiroga, Ana Irene ; Nogales Díaz, Emilio ; Arias Velasco, Marta ; Romero Izquierdo, Carlos ; Solís Fernández, Fernando ; Sotillo Buzarra, Belén | 2019-10-31El presente proyecto aborda dos aspectos muy importantes y estrechamente ligados a la adquisición de competencias básicas de cualquier titulación de grado actual y altamente demandadas por los empleadores: la adquisición de habilidades para desa[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Elsevier Science BV | 2011-07Cathodoluminescence (CL) of Ga2O3 nanowires and planar microstructures has been studied in a scanning electron microscope, as a function of the orientation angle of the structures relative to the position of the light detection system in the mic[...]texto impreso
Nogales Díaz, Emilio ; Montone, A. ; Cardellini, F. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2002-12The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in c[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2005-03-14ß-Ga_2O_3 nano- and microwires with diameters ranging from tens of nanometers to about one micron and lengths of up to tens of microns, have been obtained by sintering Ga_2O_3 powder under argon flow. The structures have been investigated by cat[...]texto impreso
Plugaru, R. ; Craciun, G. ; Nastase, N. ; Méndez Martín, Bianchi ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Nogales Díaz, Emilio | Kluwer Academic Publishers | 2000-01Luminescence emission of LPCVD polycrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As-deposited films show visible luminescence with dominant blue band. The relative intensity of blue e[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Craciun, G. ; Nastase, N. ; Cremades Rodríguez, Ana Isabel ; Nogales Díaz, Emilio | Trans Tech-Scitec Publications LTD | 1998Luminescence emission of nanocrystalline silicon films has been studied by cathodoluminescence (CL) in the scanning electron microscope. As deposited films show visible luminescence with dominant blue band as well as a red band. The evolution of[...]texto impreso
Wang, K. ; Martin, R. W. ; Nogales Díaz, Emilio ; Edwards, P. R. ; O’Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Watson, I. M. | American Institute of Physics | 2006-09-25AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broade[...]texto impreso
Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Lorenz, K. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. | IOP publishing ltd | 2011-07-15Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by[...]texto impreso
Nogales Díaz, Emilio ; Sánchez, B. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Academic Press Ltd- Elsevier Science Ltd | 2009-04Isoelectronic (In, Al) doped gallium oxide nanowires have been grown by a vapour solidification process. XRD and TEM were used for their structural characterization. The morphology and optical properties of the In(Al)-doped Ga_2O_3 nanowires hav[...]texto impreso
Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in [...]texto impreso
Martínez Criado, Gema ; Segura Ruiz, Jaime ; Manh-Hung, Chu ; Tucoulou, Remi ; López García, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Chemical Soc | 2014-10Crossed nanowire structures are the basis for high-density integration of a variety of nanodevices. Owing to the critical role of nanowires intersections in creating hybrid architectures, it has become a challenge to investigate the local struct[...]texto impreso
Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Rigby, Oliver M. ; Stamp, Alice V. ; Hindmarsh, Steve A. ; Sánchez, Ana M. | IOP Publishing | 2019-02-01beta-Ga_2O_3 intergrowths have been revealed in the SnO_2 rutile structure when SnO_2/Ga_2O_3 complex nanostructures are grown by thermal evaporation with a catalyst-free basis method. The structure is formed by a Ga_2O_3 nanowire trunk, around [...]texto impreso
Nogales Díaz, Emilio ; López, I. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. ; García, J.A. | Spie-Int Soc Optical Engineering | 2012Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoel[...]texto impreso
Nogales Díaz, Emilio ; García, José Angel ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Amer Inst Physics | 2007-09-24Er and Cr doped ß-Ga_2O_3 nano- and microwires have been grown by thermal treatments of Ga2O3 powder containing a fraction of Er_2O_3 powder or in the presence of Cr_2O_3 powder, respectively. Doping gives rise to the characteristic red photolum[...]texto impreso
López, I. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2014Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channel[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]texto impreso
Catarino, N. ; Nogales Díaz, Emilio ; Franco, N. ; Darakchieva, V. ; Miranda, S.M.C. ; Méndez Martín, Bianchi ; Alves, E. ; Marques, J.F. ; Lorenz, K. | EPL Association, European Physical Society | 2012-03The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, [...]texto impreso
Peres, M. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Lorenz, K. ; Correira, M. R. ; Monteiro, T. ; Sedrine, N. Ben | Electrochemical Society | 2019-03-06In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural an[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Garcia, J. A. | IOP publishing ltd | 2009-03-18Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used [...]texto impreso
Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, José M. ; Nó, Maria L. ; Méndez Martín, Bianchi | SPIE | 2019On one hand, interest on the tunability of the optical microcavities has increased in the last few years due to the need for selective nano-and microscale light sources to be used as photonic building blocks in several applications. On the other[...]texto impreso
Nogales Díaz, Emilio ; Martin, R. V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2006-01-16The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps pr[...]texto impreso
López, Iñaki ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2012-01The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined fo[...]texto impreso
López, I. ; Castaldini, A. ; Cavallini, A. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2014-10-15The behaviour of ß-Ga?O? nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium [...]texto impreso
In-doped gallium oxide micro- and nanostructures: morphology, structure, and luminescence properties
López, Iñaki ; Utrilla, Antonio D. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez Castellanos, J. ; González Calbet, José M. | Amer Chemical Soc | 2012-02-16The influence of indium doping on morphology, structural, and luminescence properties of gallium oxide micro- and nanostructures is reported. Indium-doped gallium oxide micro- and nanostructures have been grown by thermal oxidation of metallic g[...]texto impreso
Faye, D. Nd. ; Biquard, X. ; Nogales Díaz, Emilio ; Felizardo, M. ; Peres, M. ; Redondo Cubero, A. ; Auzelle, T. ; Daudin, B. ; Tizei, L.H.G ; Méndez Martín, Bianchi | American Chemical Society | 2019-05-09Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks [...]texto impreso
Gonzalo, Alicia ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2014-02Mn doped –Ga_2O_3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 ºC. The morphology of the resulting structures has been found to depend on[...]texto impreso
López, I ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2016-11Gallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SE[...]texto impreso
López, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez-Castellanos, Julio ; Gonzalez-Calbet, José M. | Amer Chemical Soc | 2013-02-14Elongated micro- and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium oxide have been grown by a thermal method. The presence of Sn during growth has been shown to strongly influence the morphology of the resulting structures, [...]texto impreso
Lorenz, K. ; Nogales Díaz, Emilio ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R.W. ; O`Donnell, K.P. | Materials Research Soc | 2006GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ?C in vacuum, in flowing nitrogen gas or a mixture of NH? and N?. Rutherford backscattering spectrometry in the channeling mode was use[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Garcia, J. A. ; Tate, T. J. | Materials Research Society | 2002The luminescence properties of erbium oxide grown on crystalline and amorphous silicon substrates were studied by means of photo- and cathodoluminescence techniques. Differences in the luminescence spectra for samples grown on the two type., of [...]texto impreso
Peres, Marco ; Fernandes, A.J.S. ; Oliveira, F.J. ; Alves, L.C. ; Alves, E. ; Monteiro, T.S. ; Cardoso, S. ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi | Electrochemical Society | 2019-06-24A thermal actuator based on thin flexible lamellas of Ga_2O_3 was designed in order to demonstrate the potential of this semiconductor for micro-opto-electro-mechanical applications (MOEMs). The working principle of these devices is based on the[...]texto impreso
Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, J. M. ; Nó, M. L. ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Amer Physical Soc | 2018-06-07Optical microcavities are key elements in many photonic devices, and those based on distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for higher quality factors and finesse values. Besides, they allow for wi[...]texto impreso
Nogales Díaz, Emilio ; Joachimsthaler, I. ; Heiderhoff, R. ; Piqueras de Noriega, Javier ; Balk, L.J. | American Institute of Physics | 2002-07-15Near-field cathodoluminescence (NFCL) has been used to characterize hydride vapor phase epitaxy grown n-GaN films. This technique can obtain high resolution luminescence images and perform local measurements of the diffusion length for minority [...]texto impreso
Alonso Orts, Manuel ; Chilla, Gerwin ; Hötzel, Rudolfo ; Nogales Díaz, Emilio ; San Juan, José M. ; Nó, Maria L. ; Eickhoff, Martin ; Méndez Martín, Bianchi | Optical Society of America | 2021-01-15In this Letter, we report optical confinement in the near-ultraviolet (near-UV) range in Ga2O3 nanowires (NWs) by distributed Bragg reflector (DBR) nanopatterned cavities. High-contrast DBRs, which act as the end mirrors of the cavities of the d[...]texto impreso
García Fernández, Javier ; García Carrión, Marina ; Torres Pardo, Almudena ; Martínez Casado, Ruth ; Ramírez Castellanos, Julio ; Nogales Díaz, Emilio ; González Calbet, José María ; Méndez Martín, Bianchi | Royal Society of Chemistry | 2020-02-28Herein, we achieve the synthesis and structural study of a luminescent Na-stabilized Ga-Ti oxide homologous series by atomically resolved electron microscopy. Relevant optical properties as a function of the titanium content have been revealed. [...]texto impreso
Optical energy gaps are measured for high-quality Al_(1-x)In_xN-on-GaN epilayers with a range of compositions around the lattice match point using photoluminescence and photoluminescence excitation spectroscopy. These data are combined with stru[...]texto impreso
Rodrigues, Joana ; Smazna, Daria ; Ben Sedrine, Nabiha ; Nogales Díaz, Emilio ; Adelung, Rainer ; Mishra, Yogendra K ; Méndez Martín, Bianchi ; Correia, María R. ; Monteiro, Teresa | Royal Society Chemistry | 2019-04-01ZnO microwires synthesised by the flame transport method and decorated with C_60 clusters were studied in detail by photoluminescence (PL) and cathodoluminescence (CL) techniques. The optical investigations suggest that the enhanced near band ed[...]texto impreso
Gonzalo, A. ; Nogales Díaz, Emilio ; Lorenz, K. ; Víllora, E. G. ; Shimamura, K: ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Elsevier Science BV | 2017-11The structural and luminescence properties of gallium oxide nanowires doped with chromium or manganese have been investigated. Undoped Ga?O? nanostructures have been fabricated by a thermal evaporation method, while doping was subsequently achie[...]texto impreso
Nogales Díaz, Emilio ; García, José A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | American Institute of Physics | 2007-02-01Red luminescence emission from chromium doped ß-Ga_2O_3 nanowires has been studied by means of photoluminescence (PL) techniques. PL excitation shows several bands in the ultraviolet-visible region. Time decay values, obtained by time resolved P[...]texto impreso
Fabry Perot resonant modes in the optical range 660-770 nm have been detected from single and coupled Cr doped gallium oxide microwires at room temperature. The luminescence is due to chromium ions and dominated by the broad band involving the T[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2001-09Scanning tunnelling microscopy (STM) has been sometimes applied in recent years to characterize porous silicon. In contrast, other forms of light emitting Si, such as nanocrystalline silicon films, prepared by different methods, have not been, o[...]texto impreso
Wang, K. ; Martin, R. W. ; O’Donnell, K. P. ; Katchkanov, V. ; Nogales Díaz, Emilio ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2005-09-12The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescen[...]texto impreso
Alonso Orts, Manuel ; Sanchez, Ana M ; Hindmarsh, Steven A ; López, Iñaki ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | Amer Chemical Soc | 2017-01-11Tailoring the shape of complex nanostructures requires control of the growth process. In this work, we report on the selective growth of nanostructured tin oxide on gallium oxide nanowires leading to the formation of SnO_2/Ga_2O_3 complex nanost[...]texto impreso
O'Donnell, KP ; Katchkanova, V. ; Wang, K. ; Martin, R.W. ; Edwards, P.R. ; Hourahine, B. ; Nogales Díaz, Emilio ; Mosselmans, J.F.W. ; De Vries, B. | Materials Research Society | 2005This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R. | Materials Research Society | 2003Electrically active regions of nanocrystalline silicon (nc-Si) films as well as of a p-type crystalline silicon (c-Si) wafer have been investigated by using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrume[...]texto impreso
López, Iñaqui ; Lorenz, K. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. ; Garcia, J. A. | Springer | 2014-02A systematical analysis of the correlation between the crystalline quality and the luminescence of rare-earth-implanted ß-Ga_2O_3 nanostructures with potential applications in visible and ultraviolet photonics is presented. Europium ions led to [...]texto impreso
Diaz, Joquín ; López, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Springer | 2011-05Silicon-doped gallium oxide nanowires have been synthesized by thermal methods using either a mixture of gallium oxide and silicon powders or metallic gallium with silicon powder as precursor materials. The growth mechanism has been found to be [...]texto impreso
Méndez Martín, Bianchi ; López, I. ; Alonso Orts, Manuel ; Sanz, A. ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2017-05-30The synthesis of complex nanostructures that combine materials and dimensionality, promises the ability to identify novel designs and architectures with enhanced properties that could be used in new devices. One of the building blocks in nanomat[...]texto impreso
López García, Iñaki ; Cebriano Ramírez, Teresa ; Hidalgo Alcalde, Pedro ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | American Institute of Materials Science (AIMS) | 2016A thermal evaporation method developed in the research group enables to grow and design several morphologies of semiconducting oxide nanostructures, such as Ga_2O_3, GeO_2 or Sb_2O_3, among others, and some ternary oxide compounds (ZnGa_2O_4, Zn[...]texto impreso
Nogales Díaz, Emilio ; Garcia, J. A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. | IOP publishing ltd | 2008-03-20The luminescence properties of Er doped ?-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL). Doping of the ?-Ga_2O_3 was obt[...]texto impreso
Nogales Díaz, Emilio ; Montone, A. ; Cardellin, F. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12There. has been interest in the past years in the visible luminescence properties of germanium nanocrystals. Most of the previous works refer to Ge nanocrystals embedded in an oxide matrix. In this work nanocrystalline germanium has been prepare[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2008-01-23Erbium doped ß-Ga_2O_3 nanowires and microwires have been obtained by a vapour-solid process from an initial mixture of ß-Ga_2O_3 and Er_2O_3 powders. X-ray diffraction (XRD) analysis reveals the presence of erbium gallium garnet as well as ß-Ga[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R ; Coraci, A. ; Garcia, J. A. | IOP publishing ltd | 2002Visible luminescence from erbium oxide layers grown on crystalline and amorphous silicon (c-Si and a-Si) has been investigated. The results show strong red and green cathodoluminescence bands due to intraionic Er3+ radiative transitions at room [...]texto impreso
Méndez Martín, Bianchi ; Cebriano Ramírez, Teresa ; López, I. ; Nogales Díaz, Emilio ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2013Interest on the control of light at the nano- and microscale has increased in the last years because of the incorporation of nanostructures into optical devices. In particular, semiconductor oxides microstructures emerge as important active mate[...]