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Autor Nogales Díaz, Emilio |
Documentos disponibles escritos por este autor (55)
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López, I. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Spie-Int Soc Optical Engineering | 2014Ga_2O_3 bulk single crystals have been implanted with 300 keV Europium ions to fluences ranging from 1x10^(13) to 4x10^(15) at/cm^(2). The damage build-up and Eu-incorporation was assessed by Rutherford Backscattering Spectrometry in the channel[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]texto impreso
Catarino, N. ; Nogales Díaz, Emilio ; Franco, N. ; Darakchieva, V. ; Miranda, S.M.C. ; Méndez Martín, Bianchi ; Alves, E. ; Marques, J.F. ; Lorenz, K. | EPL Association, European Physical Society | 2012-03The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, [...]texto impreso
Peres, M. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Lorenz, K. ; Correira, M. R. ; Monteiro, T. ; Sedrine, N. Ben | Electrochemical Society | 2019-03-06In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural an[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Garcia, J. A. | IOP publishing ltd | 2009-03-18Cathodoluminescence and photoluminescence techniques have been used to investigate room temperature light emission from ß-Ga_2O_3:Eu nanostructures, which were obtained by two methods. In one of them, a mixture of Ga_2O_3/Eu2O3 powders was used [...]texto impreso
Alonso Orts, Manuel ; Nogales Díaz, Emilio ; San Juan, José M. ; Nó, Maria L. ; Méndez Martín, Bianchi | SPIE | 2019On one hand, interest on the tunability of the optical microcavities has increased in the last few years due to the need for selective nano-and microscale light sources to be used as photonic building blocks in several applications. On the other[...]texto impreso
Nogales Díaz, Emilio ; Martin, R. V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2006-01-16The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps pr[...]texto impreso
López, Iñaki ; Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2012-01The field emission properties of gallium oxide nanowires grown by thermal evaporation-deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined fo[...]texto impreso
López, I. ; Castaldini, A. ; Cavallini, A. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2014-10-15The behaviour of ß-Ga?O? nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium [...]texto impreso
In-doped gallium oxide micro- and nanostructures: morphology, structure, and luminescence properties
López, Iñaki ; Utrilla, Antonio D. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez Castellanos, J. ; González Calbet, José M. | Amer Chemical Soc | 2012-02-16The influence of indium doping on morphology, structural, and luminescence properties of gallium oxide micro- and nanostructures is reported. Indium-doped gallium oxide micro- and nanostructures have been grown by thermal oxidation of metallic g[...]texto impreso
Faye, D. Nd. ; Biquard, X. ; Nogales Díaz, Emilio ; Felizardo, M. ; Peres, M. ; Redondo Cubero, A. ; Auzelle, T. ; Daudin, B. ; Tizei, L.H.G ; Méndez Martín, Bianchi | American Chemical Society | 2019-05-09Rare earth (RE)-doped GaN nanowires (NWs), combining the well-defined and controllable optical emission lines of trivalent RE ions with the high crystalline quality, versatility, and small dimension of the NW host, are promising building blocks [...]texto impreso
Gonzalo, Alicia ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | Wiley-V C H Verlag Gmbh | 2014-02Mn doped –Ga_2O_3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 ºC. The morphology of the resulting structures has been found to depend on[...]texto impreso
López, I ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2016-11Gallium oxide microrods have been grown by an evaporation-deposition method by using a precursor containing lithium in order to check the influence of such dopant on the morphology and physical properties of the obtained ß-Ga_2O_3 structures. SE[...]texto impreso
López, Iñaki ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Peche, Andrea ; Ramirez-Castellanos, Julio ; Gonzalez-Calbet, José M. | Amer Chemical Soc | 2013-02-14Elongated micro- and nanostructures of Sn doped or Sn and Cr codoped monoclinic gallium oxide have been grown by a thermal method. The presence of Sn during growth has been shown to strongly influence the morphology of the resulting structures, [...]texto impreso
Lorenz, K. ; Nogales Díaz, Emilio ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R.W. ; O`Donnell, K.P. | Materials Research Soc | 2006GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ?C in vacuum, in flowing nitrogen gas or a mixture of NH? and N?. Rutherford backscattering spectrometry in the channeling mode was use[...]