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Autor Mártil de la Plaza, Ignacio |
Documentos disponibles escritos por este autor (121)
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Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.texto impreso
Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-12-15The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiOxHy thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gase[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2004-07-01The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor depos[...]texto impreso
Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained a[...]texto impreso
Mártil de la Plaza, Ignacio ; San Andres Serrano, Enrique | Sociedad Española de Cerámica y Vidrio | 2004-03En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en l[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-04-13CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used,[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | IOP publishing ltd | 2005-10Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 o[...]texto impreso
The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26Silicon oxynitride films covering the whole composition range from silicon nitride to silicon oxide have been deposited by electron cyclotron resonance chemical vapor deposition from SiH4, O-2 and N-2 gas mixtures. The composition of the films h[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | John Wiley & Sons Ltd | 2000-08The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy-ion elastic recoil detection analysis (ERDA) with Xe-129 ion beams of 1.1 and 1.8 MeV amu(-1) and time-of-light (ToF) ma[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Elsevier Science SA | 2006-10-25The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | John Wiley & Sons Ltd. | 2002-08Films of SiOxNy:H were deposited at room temperature on Si substrates by the electron cyclotron resonance (ECR) plasma method. By varying the flow rates of the precursor gases SiH4, O-2. and N-2, the whole composition range between pure silicon [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier | 2004-04The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 i[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Inst. Pure Applied Physics | 2004-01An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposi[...]texto impreso
As it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the D[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Dueñas, S. ; Peláez, R. ; Castán, E. ; Barbolla, J. | Materials Research Society | 1998We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. Th[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo ; Iborra, E. | American Institute of Physics | 1987-11-15Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín Pacheco, Jaime Miguel ; Castán, E. ; Dueñas, S. | American Institute of Physics | 1995-11-01Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forw[...]texto impreso
The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. | Elsevier Science SA | 1998-03-02SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), r[...]texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Prado Millán, Álvaro del ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | Institute of Electrical and Electronics and Engineers (IEEE) | 2016We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. ; Fernández, M. | Elsevier Science SA | 1998-04-01The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are fou[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-09-15A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution dur[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Hindawi Publishing Corporation | 2013In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2010-06-01The influence of the silicon nitride blocking layer thickness on the interface state densities (D(it)) of HfO(2)/SiN(x):H gate-stacks on n-type silicon have been analyzed. The blocking layer consisted of 3 to 7 nm thick silicon nitride films dir[...]texto impreso
Al/HfO(2)/SiNx:H/n-Si metal-insulator-semiconductor (MIS) capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron-cyclotron-resonance assisted chemical-va[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07The effect of deposition temperature on the physical properties of SiOxNy films has been studied. The films have ben deposited from mixtures of SiH4, O-2 and N-2, using the electron cyclotron resonance-chemical vapor deposition technique, with s[...]texto impreso
We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfa[...]texto impreso
Garcia, Hector ; Castán, Helena ; Dueñas, Salvador ; Bailón, Luis ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio | Springer | 2016-07-16A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are[...]texto impreso
The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (S[...]texto impreso
We report a study of metal-insulator-semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator pr[...]texto impreso
The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface s[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor dep[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]texto impreso
Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) system. In this growth system the deposition pressure is around 1 mbar, three orders of magnitude higher than in the conventional ones, assuring that[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | IOP publishing ltd | 2001-07A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the [...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | IOP publishing ltd | 2009-04-21In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminat[...]texto impreso
We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman sig[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Peláez, R. ; Pinacho, R. ; Quintanilla, L. | Amer Inst Physics | 1997-08-11Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transi[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martín, J.M. ; García, S. | IEEE-Inst. Electrical Electronics Engineers Inc. | 1998-08We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions[...]texto impreso
We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 500 degrees C, gas enhanced [...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2013-07-15We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal tra[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Elsevier Science SA | 1999-04Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) an[...]texto impreso
Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperatur[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]texto impreso
Mártil de la Plaza, Ignacio ; Gremenok, V.F. ; Bodnar, I.V. ; Martines, F.L. ; Sergeev-Nekrasov, S.L. ; Victorov, I.A. | Trans Tech-Scitec Publications LDT | 1999We report on structural and optical measurements made on thin films of the quaternary compounds CuxAg1-xInSe2(x = 0; 0.3; 0.5; 0.7; 1.0). The films were prepared by pulsed laser deposition (PLD) of prereacted material onto glass substrates. The [...]texto impreso
Mártil de la Plaza, Ignacio ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science Ltd | 2006-12The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O-2 ratio in the sputtering gas mixture. Transmission electron microscopy s[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Lucía Mulas, María Luisa ; San Andres Serrano, Enrique | American Institute of Physics | 2007-08-15Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were i[...]texto impreso
Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical a[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | IEEE | 2009In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed.[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | American Institute of Physics | 2010-05-15In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence wi[...]texto impreso
We have measured the electrical and optical properties of blue light-emitting diodes (LEDs) based on III-V nitrides. The current-voltage characteristic is described by means of the relation I = I-0 exp(alpha V). In this equation alpha is tempera[...]texto impreso
We have studied the influence of nitrogen plasma exposure of the InP surface on the electrical characteristics of electron cyclotron resonance deposited Al/SiNx:H/InP devices. Nitrogen plasma exposure was performed just before the SiNx:H deposit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2004-05-15The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiOxNyHz films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute co[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2008-11-01Al/HfO(2)/SiN(x):H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martínez, F.L. ; Selle, B. ; Sieber, I. | Elsevier Science BV | 1998-05We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonanc[...]texto impreso
García Hemme, Eric ; Montero Álvarez, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2016-07-13We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline sili[...]texto impreso
A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap st[...]texto impreso
In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient s[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Inst. Pure Applied Physics | 2003-08-01An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2009-09The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behav[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2012-12-01We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies h[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2012Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements sh[...]texto impreso
Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implant[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2009-09-01We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Amer Inst Physics | 2009-01-26The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR[...]texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Prado Millán, Álvaro del ; Ferrer, F. J. ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP Publishing | 2016-03Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Redondo, E. ; Blanco, N. | Amer Inst Physics | 1999-02-15A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Elsevier Science SA | 2012-08-31Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effe[...]texto impreso
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García Hemme, Eric ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2015-02-25This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser meltin[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán | World Scientific Publ. Co. Pte.Ltd. | 2002-11-20We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-07-15The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O-2 and N-2 as precursor gases. For [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Physical Society | 2001-06-15Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the th[...]texto impreso
Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2005-05We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance pl[...]texto impreso
We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | The Optical Society Of America | 1992-04-01The refractive index n and the absorption coefficient-alpha of radio frequency sputtered CuGaSe2 and CuInSe2 thin films were obtained by means of transmissivity (T) and reflectivity (R) measurements at normal incidence. The optical properties we[...]texto impreso
Optical-transmission spectra are very sensitive to inhomogeneities in thin films. In particular, a non-uniform thickness produces a clear shrinking in the transmission spectrum at normal incidence. If this deformation is not taken into account, [...]texto impreso
Thin films of hafnium oxide ( HfO2) have been grown by high pressure reactive sputtering on transparent quartz substrates ( UV- grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-07-13An optical spectroscopic study of the plasma produced during rf sputtering of an YBa2Cu3O7-x target was performed to analyze two basic properties of the deposition process: resputtering effects and oxidation mechanisms. Strong emissions of all t[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Amer Inst Physics | 2007-11-05High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The f[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2005-12-01The oxygen to silicon ratio of several SiOxHy thin films deposited by the electron cyclotron resonance plasma method was studied by several methods (heavy ion elastic recoil detection analysis, energy dispersive X-ray spectroscopy, Auger spectro[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd | 2008-08-08Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering (HPRS) at pressures between 0.8 and 1.6 mbar. Growth, composition and morphology were investigated using Transmission Electron Microscopy (TEM), Heavy Ion Elastic[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer. Inst. Physics | 2005-11We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the depos[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The composition (x = [O]/[Si]), hydrogen content, bonding configuration and paramagnetic defects of SiOx films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precurs[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Sociedad Española de Cerámica y Vidrio | 2004-03Se han fabricado estructuras MIS sobre Si (100) mediante un proceso en dos pasos: una primera exposición del sustrato de Si a un plasma ECR de oxígeno, que da lugar a la obtención de una capa de SiOx (en adelante PO-SiOx), seguido de un depósito[...]texto impreso
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We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have been studied by means of Raman spectroscopy, glancing incidence X-ray diffraction (GIRXD), van der Pauw and Hall effect measurements. After PLM p[...]texto impreso
In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid th[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films wa[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer Inst. Physics | 2003-07We present a comparative study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using SiN1.55:H or SiN1.55:H/SiOx stacks as gate dielectrics, with the aim of improving the thermal stability of the S[...]texto impreso
Mártil de la Plaza, Ignacio ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2000-02-01The effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N-2 and SiH4 gas mixtures, and N-2, O-2, and SiH4 gas mixtures, respectively, using the [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-08-15We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions ([...]texto impreso
González Díaz, Germán ; Pastor, D. ; García Hemme, Eric ; Montero, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio | Elsevier Sci. Ltd | 2017-02The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo ; Iborra, E. | American Institute of Physics | 1989-04-15All?sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance?frequency (C?F) and capacitance?bias voltage (C?V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyze[...]texto impreso
Mártil de la Plaza, Ignacio ; Bravo, D. ; Fernández, M. ; García, S. ; López, F.J. | American Institute of Physics | 1995-11-27SiNx:H films with a wide composition range and, some of them, with low oxygen content are deposited at room temperature. The defects observed in the films are attributed to Si-dangling bonds, with a structure depending on film composition. For t[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del | American Institute of Physics | 2014-05-26We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2013-08-07In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Santamaría Sánchez-Barriga, Jacobo ; Sánchez Quesada, Francisco | American Institute of Physics | 1994-03-07Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | American Institute of Physics | 1990-06-01Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300?°C amorphous or poorly crystalline Se[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2011-06-01We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-12In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external cir[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2012-11-05We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-m[...]texto impreso
Mártil de la Plaza, Ignacio ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2001-08-01Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance-voltage and current-voltage characteristics) and defect spectroscopy (electro[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Fernández, M. | IOP publishing ltd | 1997-12SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics [...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2010-11Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. T[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07We analyze the influence of rapid thermal annealing on Al/SiNx:H/Si structures with a nitrogen to silicon ratio of 1.55 in the insulator bulk. The SiNx:H is deposited by the electron cyclotron resonance plasma method and the films were annealed [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 1999-08-15We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x = 0.97, x = 1.43, and x = 1.55, r[...]texto impreso
The influence of rapid thermal annealing treatments on the interface characteristics of Al/SiNx:H/InP devices was analyzed. The insulator was obtained by jan electron cyclotron resonance plasma method at a 200 degrees C-deposition temperature. T[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2002-08-15The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost a[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2008-07-01Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V [...]texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; Voz Sánchez, Cristobal ; Gerling, Luis ; Puigdollers, Joaquin ; Alcubilla, R. | Elsevier Science BV | 2018-10Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong band bending in the S[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-03-15Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-depend[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2011-11-09We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ul[...]