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Autor Mártil de la Plaza, Ignacio |
Documentos disponibles escritos por este autor (121)
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García Hemme, Eric ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2015-02-25This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser meltin[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán | World Scientific Publ. Co. Pte.Ltd. | 2002-11-20We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-07-15The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O-2 and N-2 as precursor gases. For [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Physical Society | 2001-06-15Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the th[...]![]()
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Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2005-05We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance pl[...]![]()
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We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | The Optical Society Of America | 1992-04-01The refractive index n and the absorption coefficient-alpha of radio frequency sputtered CuGaSe2 and CuInSe2 thin films were obtained by means of transmissivity (T) and reflectivity (R) measurements at normal incidence. The optical properties we[...]![]()
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Optical-transmission spectra are very sensitive to inhomogeneities in thin films. In particular, a non-uniform thickness produces a clear shrinking in the transmission spectrum at normal incidence. If this deformation is not taken into account, [...]![]()
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Thin films of hafnium oxide ( HfO2) have been grown by high pressure reactive sputtering on transparent quartz substrates ( UV- grade silica) and silicon wafers. Deposition conditions were adjusted to obtain polycrystalline as well as amorphous [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-07-13An optical spectroscopic study of the plasma produced during rf sputtering of an YBa2Cu3O7-x target was performed to analyze two basic properties of the deposition process: resputtering effects and oxidation mechanisms. Strong emissions of all t[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Amer Inst Physics | 2007-11-05High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The f[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2005-12-01The oxygen to silicon ratio of several SiOxHy thin films deposited by the electron cyclotron resonance plasma method was studied by several methods (heavy ion elastic recoil detection analysis, energy dispersive X-ray spectroscopy, Auger spectro[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd | 2008-08-08Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering (HPRS) at pressures between 0.8 and 1.6 mbar. Growth, composition and morphology were investigated using Transmission Electron Microscopy (TEM), Heavy Ion Elastic[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer. Inst. Physics | 2005-11We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the depos[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The composition (x = [O]/[Si]), hydrogen content, bonding configuration and paramagnetic defects of SiOx films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precurs[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Sociedad Española de Cerámica y Vidrio | 2004-03Se han fabricado estructuras MIS sobre Si (100) mediante un proceso en dos pasos: una primera exposición del sustrato de Si a un plasma ECR de oxígeno, que da lugar a la obtención de una capa de SiOx (en adelante PO-SiOx), seguido de un depósito[...]![]()
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We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have been studied by means of Raman spectroscopy, glancing incidence X-ray diffraction (GIRXD), van der Pauw and Hall effect measurements. After PLM p[...]![]()
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In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid th[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films wa[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer Inst. Physics | 2003-07We present a comparative study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using SiN1.55:H or SiN1.55:H/SiOx stacks as gate dielectrics, with the aim of improving the thermal stability of the S[...]![]()
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Mártil de la Plaza, Ignacio ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2000-02-01The effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N-2 and SiH4 gas mixtures, and N-2, O-2, and SiH4 gas mixtures, respectively, using the [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-08-15We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions ([...]![]()
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González Díaz, Germán ; Pastor, D. ; García Hemme, Eric ; Montero, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio | Elsevier Sci. Ltd | 2017-02The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the[...]