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Autor Mártil de la Plaza, Ignacio |
Documentos disponibles escritos por este autor (121)
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We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfa[...]![]()
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Garcia, Hector ; Castán, Helena ; Dueñas, Salvador ; Bailón, Luis ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio | Springer | 2016-07-16A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are[...]![]()
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The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (S[...]![]()
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We report a study of metal-insulator-semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator pr[...]![]()
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The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface s[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor dep[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]![]()
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) system. In this growth system the deposition pressure is around 1 mbar, three orders of magnitude higher than in the conventional ones, assuring that[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | IOP publishing ltd | 2001-07A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | IOP publishing ltd | 2009-04-21In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminat[...]![]()
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We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman sig[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Peláez, R. ; Pinacho, R. ; Quintanilla, L. | Amer Inst Physics | 1997-08-11Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silicon by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transi[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martín, J.M. ; García, S. | IEEE-Inst. Electrical Electronics Engineers Inc. | 1998-08We present an electrical characterization of discrete Bipolar Junction Transistor (BJT) devices with nonuniform doped emitter and base zones. The measurement of the I-V and C-V characteristics of the emitter-base and the collector-base junctions[...]![]()
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We developed and tested three MBE-compatible processes for the deposition of high-quality low-temperature silicon oxides and oxynitrides in the ultra high vacuum at substrate temperatures between room temperature and 500 degrees C, gas enhanced [...]