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Autor Mártil de la Plaza, Ignacio |
Documentos disponibles escritos por este autor (121)
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martínez, F.L. ; Selle, B. ; Sieber, I. | Elsevier Science BV | 1998-05We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonanc[...]![]()
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García Hemme, Eric ; Montero Álvarez, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2016-07-13We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline sili[...]![]()
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A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap st[...]![]()
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In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient s[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Inst. Pure Applied Physics | 2003-08-01An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2009-09The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behav[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2012-12-01We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies h[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2012Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements sh[...]![]()
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Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implant[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2009-09-01We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Amer Inst Physics | 2009-01-26The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR[...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Prado Millán, Álvaro del ; Ferrer, F. J. ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP Publishing | 2016-03Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Redondo, E. ; Blanco, N. | Amer Inst Physics | 1999-02-15A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Elsevier Science SA | 2012-08-31Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effe[...]![]()
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