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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Al/HfO(2)/SiNx:H/n-Si metal-insulator-semiconductor (MIS) capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron-cyclotron-resonance assisted chemical-va[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07The effect of deposition temperature on the physical properties of SiOxNy films has been studied. The films have ben deposited from mixtures of SiH4, O-2 and N-2, using the electron cyclotron resonance-chemical vapor deposition technique, with s[...]![]()
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García Hemme, Eric ; Yu, K. M. ; Wahnon, P. ; González Díaz, Germán ; Walukiewicz, W. | American Institute of Physics | 2015-05-04We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ? x ? 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that el[...]![]()
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We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfa[...]![]()
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The interfacial state density existing in metal-insulator-semiconductor (MIS) structures was measured by deep level transient spectroscopy technique. The MIS structures were fabricated on InP substrates by direct deposition of silicon nitride (S[...]![]()
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We report a study of metal-insulator-semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator pr[...]![]()
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The influence of the dielectric composition and post deposition rapid thermal annealing (RTA) treatments on the electrical characteristics of low nitrogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To obtain the interface s[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor dep[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]![]()
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) system. In this growth system the deposition pressure is around 1 mbar, three orders of magnitude higher than in the conventional ones, assuring that[...]![]()
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Castán, Helena ; Pérez, Eduardo ; Dueñas, Salvador ; Bailón, Luis ; Olea Ariza, Javier ; Pastor Pastor, David ; García Hemme, Eric ; Irigoyen Irigoyen, Maite ; González Díaz, Germán | American Institute of Physics (AIP) | 2012Intermediate band silicon solar cells have been fabricated by Titanium ion implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the unimplanted substrate is obtained. In this work we present el[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | IOP publishing ltd | 2001-07A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | IOP publishing ltd | 2009-04-21In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminat[...]![]()
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Pérez, E. ; Castán, H. ; García, H. ; Dueñas, S. ; Bailón, L. ; Montero Álvarez, Daniel ; García-Hernansanz, R. ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-01In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the e[...]