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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Elsevier Science SA | 2012-08-31Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effe[...]![]()
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García Hemme, Eric ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2015-02-25This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser meltin[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán | World Scientific Publ. Co. Pte.Ltd. | 2002-11-20We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-07-15The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O-2 and N-2 as precursor gases. For [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Physical Society | 2001-06-15Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the th[...]![]()
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Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2005-05We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance pl[...]![]()
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Olea Ariza, Javier ; Algaidy, S. ; Prado Millán, Álvaro del ; García Hemme, Eric ; García Hernansanz, Rodrigo ; Montero, Daniel ; Caudevilla Gutiérrez, Daniel ; González Díaz, Germán ; Soria, E. ; Gonzalo, J. | Elsevier Science SA | 2020-04-15We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below t[...]![]()
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We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | The Optical Society Of America | 1992-04-01The refractive index n and the absorption coefficient-alpha of radio frequency sputtered CuGaSe2 and CuInSe2 thin films were obtained by means of transmissivity (T) and reflectivity (R) measurements at normal incidence. The optical properties we[...]![]()
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González Díaz, Germán ; Bernabeu Martínez, Eusebio ; Hernández Rojas, J. L. ; Escudero, J. L. ; Guerrero, H. | American Institute of Physics | 1993-09-01Bulk polycrystalline cadmium manganese telluride, Cd(l-x)Mn(x)Te, was manufactured in several compositions by a synthesis process. The structure of the obtained compounds was the characteristic zinc-blende polycrystalline pattern being the grain[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-07-13An optical spectroscopic study of the plasma produced during rf sputtering of an YBa2Cu3O7-x target was performed to analyze two basic properties of the deposition process: resputtering effects and oxidation mechanisms. Strong emissions of all t[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Amer Inst Physics | 2007-11-05High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The f[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2005-12-01The oxygen to silicon ratio of several SiOxHy thin films deposited by the electron cyclotron resonance plasma method was studied by several methods (heavy ion elastic recoil detection analysis, energy dispersive X-ray spectroscopy, Auger spectro[...]