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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2008-07-01Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-03-15Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-depend[...]![]()
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González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. | American Physical Society | 1994-10-15We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonr[...]![]()
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León Yebra, Carlos ; Martín, J. M. ; Santamaría Sánchez-Barriga, Jacobo ; Skarp, J. ; González Díaz, Germán ; Sánchez Quesada, Francisco | American Institute of Physics | 1996-05-15The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformation[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2011-11-09We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ul[...]