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Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.texto impreso
Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-12-15The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiOxHy thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gase[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2004-07-01The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor depos[...]texto impreso
Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained a[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-04-13CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used,[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | IOP publishing ltd | 2005-10Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 o[...]texto impreso
The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C[...]texto impreso
González Díaz, Germán ; Artús, L. ; Blanco, N. ; Cuscó, R. ; Ibañez, J. ; Long, A.R. ; Rahman, M. | American Institute of Physics | 2000-12-01We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analys[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26Silicon oxynitride films covering the whole composition range from silicon nitride to silicon oxide have been deposited by electron cyclotron resonance chemical vapor deposition from SiH4, O-2 and N-2 gas mixtures. The composition of the films h[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | John Wiley & Sons Ltd | 2000-08The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy-ion elastic recoil detection analysis (ERDA) with Xe-129 ion beams of 1.1 and 1.8 MeV amu(-1) and time-of-light (ToF) ma[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Elsevier Science SA | 2006-10-25The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | John Wiley & Sons Ltd. | 2002-08Films of SiOxNy:H were deposited at room temperature on Si substrates by the electron cyclotron resonance (ECR) plasma method. By varying the flow rates of the precursor gases SiH4, O-2. and N-2, the whole composition range between pure silicon [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier | 2004-04The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 i[...]
