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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.![]()
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Apuntes de trabajo y exámenes resueltos de la Asignatura Electrónica Analógica, de la desaparecida Ingeniería Superior Electrónica. Asimismo, descripción de los modelos SPICE de los dispositivos electrónicos básicos.![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-12-15The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiOxHy thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gase[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2004-07-01The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor depos[...]![]()
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Electrical characterization of Al/SiNx:H/InP structures shows that ECR nitrogen plasma cleaning of InP surfaces gives rise to a noticeable improvement in the interface quality, whereas insulator and semiconductor bulk properties are maintained a[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-04-13CuGaxIn1-xSe2 thin films have been deposited by rf sputtering from three targets with different (Ga,In) content (x = 0.25, x = 0.5, and x = 0.75). A structural, compositional, optical, and electrical study has been carried out for films grown at[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used,[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | IOP publishing ltd | 2005-10Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 o[...]![]()
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The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C[...]![]()
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González Díaz, Germán ; Artús, L. ; Blanco, N. ; Cuscó, R. ; Ibañez, J. ; Long, A.R. ; Rahman, M. | American Institute of Physics | 2000-12-01We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analys[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26Silicon oxynitride films covering the whole composition range from silicon nitride to silicon oxide have been deposited by electron cyclotron resonance chemical vapor deposition from SiH4, O-2 and N-2 gas mixtures. The composition of the films h[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | John Wiley & Sons Ltd | 2000-08The composition of amorphous SiNx:H films grown by the electron cyclotron resonance (ECR) plasma method was studied by heavy-ion elastic recoil detection analysis (ERDA) with Xe-129 ion beams of 1.1 and 1.8 MeV amu(-1) and time-of-light (ToF) ma[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Elsevier Science SA | 2006-10-25The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | John Wiley & Sons Ltd. | 2002-08Films of SiOxNy:H were deposited at room temperature on Si substrates by the electron cyclotron resonance (ECR) plasma method. By varying the flow rates of the precursor gases SiH4, O-2. and N-2, the whole composition range between pure silicon [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier | 2004-04The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 i[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Inst. Pure Applied Physics | 2004-01An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposi[...]![]()
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As it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the D[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Dueñas, S. ; Peláez, R. ; Castán, E. ; Barbolla, J. | Materials Research Society | 1998We have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200 degrees C. Th[...]![]()
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González Díaz, Germán ; Hernández Vélez, M. ; Jensen, J. ; Martínez, O. ; Sanz, R. ; Vázquez, M. | Springer | 2009-08We present results derived from continuous and localized 35 keV (55)Mn(+) ion implantations into ZnO. Localized implantations were carried out by using self-ordered alumina membranes as masks leading to ordered arrays of implanted volumes on the[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo ; Iborra, E. | American Institute of Physics | 1987-11-15Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín Pacheco, Jaime Miguel ; Castán, E. ; Dueñas, S. | American Institute of Physics | 1995-11-01Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forw[...]![]()
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González Díaz, Germán ; Martín, J.M. ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Pinacho, R. ; Quintanilla, L. | American Institute of Physics | 1997-04-01In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. | Elsevier Science SA | 1998-03-02SiNx:H films have been deposited using two different ECR plasma sources attached to a similar deposition chamber, a Compact source and an AX4500 source both from Astex. The sources mainly differ in the discharge volume, 55 cm(3) and 936 cm(3), r[...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Prado Millán, Álvaro del ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | Institute of Electrical and Electronics and Engineers (IEEE) | 2016We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction wit[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín, J.M. ; Fernández, M. | Elsevier Science SA | 1998-04-01The influence of the gas flow ratio (R) (O-2/SiH4 and N-2/SiH4) and the deposition temperature on the physical properties of SiOy and SiNx:H thin films deposited by the ECR-CVD method is analyzed. Two deposition regimes limited by R = 1, are fou[...]