Información del autor
Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
![](./images/expand_all.gif)
![](./images/collapse_all.gif)
![Selecciones disponibles](./images/orderby_az.gif)
![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Elsevier Science SA | 1999-04Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) an[...]![]()
texto impreso
Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperatur[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Lucía Mulas, María Luisa ; San Andres Serrano, Enrique | American Institute of Physics | 2007-08-15Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were i[...]![]()
texto impreso
Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical a[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | IEEE | 2009In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed.[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | American Institute of Physics | 2010-05-15In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence wi[...]![]()
texto impreso
We have studied the influence of nitrogen plasma exposure of the InP surface on the electrical characteristics of electron cyclotron resonance deposited Al/SiNx:H/InP devices. Nitrogen plasma exposure was performed just before the SiNx:H deposit[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2004-05-15The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiOxNyHz films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute co[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2008-11-01Al/HfO(2)/SiN(x):H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor [...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martínez, F.L. ; Selle, B. ; Sieber, I. | Elsevier Science BV | 1998-05We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonanc[...]![]()
texto impreso
García Hemme, Eric ; Montero Álvarez, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2016-07-13We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline sili[...]![]()
texto impreso
![]()
texto impreso
A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap st[...]![]()
texto impreso
In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient s[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Inst. Pure Applied Physics | 2003-08-01An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2009-09The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behav[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2012-12-01We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies h[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2012Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements sh[...]![]()
texto impreso
Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implant[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2009-09-01We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Amer Inst Physics | 2009-01-26The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR[...]![]()
texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Prado Millán, Álvaro del ; Ferrer, F. J. ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP Publishing | 2016-03Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An[...]![]()
texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Redondo, E. ; Blanco, N. | Amer Inst Physics | 1999-02-15A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method[...]