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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-08-15We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions ([...]![]()
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González Díaz, Germán ; Pastor, D. ; García Hemme, Eric ; Montero, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio | Elsevier Sci. Ltd | 2017-02The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo ; Iborra, E. | American Institute of Physics | 1989-04-15All?sputtered CuInSe2/CdS solar cellheterojunctions have been analyzed by means of capacitance?frequency (C?F) and capacitance?bias voltage (C?V) measurements. Depending on the CuInSe2 layer composition, two kinds of heterojunctions were analyze[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del | American Institute of Physics | 2014-05-26We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by[...]![]()
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Olea Ariza, Javier ; López, E. ; Antolín, E. ; Martí, A. ; Luque, A. ; García Hemme, Eric ; Pastor, D. ; García Hernansanz, Rodrigo ; Prado Millán, Álvaro del ; González Díaz, Germán | IOP publishing ltd | 2016-02-10Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300?K range and the room temperature spectral photoresponse at energies over the [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2013-08-07In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Santamaría Sánchez-Barriga, Jacobo ; Sánchez Quesada, Francisco | American Institute of Physics | 1994-03-07Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | American Institute of Physics | 1990-06-01Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300?°C amorphous or poorly crystalline Se[...]![]()
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González Díaz, Germán ; Artús, L. ; Blanco, N ; Cuscó, R. ; Hernández, S. | American Institute of Physics | 2003-03-01Raman scattering has been used to study the lattice recovery and electrical activation of Si+-implanted In0.53Ga0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery, of totally amorphized samples is studied for annea[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2011-06-01We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-12In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external cir[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2012-11-05We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-m[...]![]()
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González Díaz, Germán ; Artús, L. ; Calleja, E. ; Cuscó, R. ; Iborra, E. ; Jiménez, J. ; Pastor, D. ; Peiró, F. | American Institute of Physics | 2006-08-15We have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Fernández, M. | IOP publishing ltd | 1997-12SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2010-11Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. T[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07We analyze the influence of rapid thermal annealing on Al/SiNx:H/Si structures with a nitrogen to silicon ratio of 1.55 in the insulator bulk. The SiNx:H is deposited by the electron cyclotron resonance plasma method and the films were annealed [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 1999-08-15We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x = 0.97, x = 1.43, and x = 1.55, r[...]![]()
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The influence of rapid thermal annealing treatments on the interface characteristics of Al/SiNx:H/InP devices was analyzed. The insulator was obtained by jan electron cyclotron resonance plasma method at a 200 degrees C-deposition temperature. T[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2002-08-15The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost a[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2008-07-01Ion implantation of Ti into Si at high doses has been performed. After laser annealing the maximum average of substitutional Ti atoms is about 10(18) cm(-3). Hall effect measurements show n-type samples with mobility values of about 400 cm(2)/V [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-03-15Si samples have been implanted with very high Ti doses (over the theoretical Mott limit) to obtain an intermediate band (IB) in the host semiconductor. The electronic transport properties of this material have been analyzed by temperature-depend[...]![]()
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González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. | American Physical Society | 1994-10-15We present Raman spectra of InP measured under nonresonant conditions revealing multiphonon processes up to fifth order. Using an incident photon energy in the absorption region of the compound but far from any of its interband transitions, nonr[...]![]()
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León Yebra, Carlos ; Martín, J. M. ; Santamaría Sánchez-Barriga, Jacobo ; Skarp, J. ; González Díaz, Germán ; Sánchez Quesada, Francisco | American Institute of Physics | 1996-05-15The use of Kramers–Kronig transforms is proposed for the treatment of admittance spectroscopy data of junctions when significant shunt conductance or series resistance is present. An algorithm has been implemented to calculate the transformation[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2011-11-09We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ul[...]