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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Elsevier Science SA | 1999-04Silicon oxynitride films were deposited at room temperature using the ECR-PECVD technique. Precursor gases were O(2), N(2) and SiH(4). The composition of the films can be controlled by regulating the gases flow ratio. R = (O(2) + N(2))/SiH(4) an[...]![]()
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Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Ex situ deposited SiNx:H/In0.53Ga0.47As metal-insulator-semiconductor devices, with a minimum of interface state density of 3.5 x 10(11) eV(-1) cm(-2) have been obtained by electron cyclotron resonance plasma method at a low substrate temperatur[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Lucía Mulas, María Luisa ; San Andres Serrano, Enrique | American Institute of Physics | 2007-08-15Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were i[...]![]()
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Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical a[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | IEEE | 2009In this work we report the successful doping of Si with Ti at doses beyond the Mott limit for this element keeping high lattice quality. Ti implantation in Si at high doses and subsequent Pulsed-Laser Melting (PLM) annealing have been performed.[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | American Institute of Physics | 2010-05-15In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence wi[...]![]()
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We have studied the influence of nitrogen plasma exposure of the InP surface on the electrical characteristics of electron cyclotron resonance deposited Al/SiNx:H/InP devices. Nitrogen plasma exposure was performed just before the SiNx:H deposit[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2004-05-15The influence of H on the composition and atomic concentrations of Si, O, and N of plasma deposited SiOxNyHz films was investigated. The bonding scheme of H was analyzed by Fourier-transform infrared spectroscopy. The composition and absolute co[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2008-11-01Al/HfO(2)/SiN(x):H/n-Si metal-insulator-semiconductor capacitors have been studied by electrical characterization. Films of silicon nitride were directly grown on n-type silicon substrates by electron cyclotron resonance assisted chemical vapor [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Martínez, F.L. ; Selle, B. ; Sieber, I. | Elsevier Science BV | 1998-05We have analyzed the effects of rapid thermal annealing on the composition and on the bonding and optical properties of amorphous hydrogenated silicon nitride (a-Si-x:H) thin films deposited at room temperature by the electron cyclotron resonanc[...]![]()
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García Hemme, Eric ; Montero Álvarez, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2016-07-13We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline sili[...]![]()
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A comparison between interface quality of several temperatures thermal annealed HPRS TiO2 films and 750 degrees C annealed ALD TiO2 films has been established. Our attention has been focused on the interfacial state and disordered induced gap st[...]![]()
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In this article, we study the influences of the rapid thermal annealing temperature and dielectric composition on the electrical characteristics of ECR-deposited silicon nitride SiNx:H-InP and SiNx:H-InGaAs interfaces. C-V deep level transient s[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | Inst. Pure Applied Physics | 2003-08-01An electrical characterization of Al/SiOxNyHz/Si metal-insulator-semiconductor (MIS) structures has been carried out. SiOxNyHz films of different compositions have been obtained from these structures by varying gas flow in the electron-cyclotron[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2009-09The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behav[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2012-12-01We have analyzed by means of Rutherford backscattering spectrometry (RBS) the Ti lattice location and the degree of crystalline lattice recovery in heavily Ti implanted silicon layers subsequently pulsed laser melted (PLM). Theoretical studies h[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2012Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements sh[...]![]()
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Micro-Raman measurements were performed to study the nitrogen-related modes in ZnO samples implanted with N+. The two stable N isotopes, N-14 and N-15, were implanted. Distinct peaks at 277 and 512 cm(-1) are observed irrespective of the implant[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2009-09-01We have studied the laser thermal annealing (LTA) effects on single crystal GaP. The samples have been analyzed by means of Raman spectroscopy, glancing incidence x-ray diffraction (GIRXD), and transmission electron microscopy (TEM) measurements[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Amer Inst Physics | 2009-01-26The doping of conventional semiconductors with deep level (DL) centers has been proposed to synthesize intermediate band materials. A recent fundamental study of the nonradiative recombination (NRR) mechanisms predicts the suppression of the NRR[...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Prado Millán, Álvaro del ; Ferrer, F. J. ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP Publishing | 2016-03Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Redondo, E. ; Blanco, N. | Amer Inst Physics | 1999-02-15A minimum interface trap density of 10(12) eV(-1) cm(-2) was obtained on SiNx:H/InP metalinsulator-semiconductor structures without InP surface passivation. The SiNx:H gate insulator was obtained by the electron cyclotron resonance plasma method[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Elsevier Science SA | 2012-08-31Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effe[...]![]()
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García Hemme, Eric ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2015-02-25This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser meltin[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán | World Scientific Publ. Co. Pte.Ltd. | 2002-11-20We present a micro-Raman study of alterations in InGaAs/InP epilayers after rapid thermal annealing. Defects consisting of protruding material with typical dimensions of a few microns can be observed on the surface of the annealed samples. Micro[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-07-15The effect of rapid thermal annealing (RTA) processes on the structural properties of SiOxNyHz films was investigated. The samples were deposited by the electron cyclotron resonance plasma method, using SiH4, O-2 and N-2 as precursor gases. For [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Physical Society | 2001-06-15Hydrogen and nitrogen release processes in amorphous silicon nitride dielectrics have been studied by MeV ion scattering spectrometry in combination with infrared spectroscopy. The outdiffusion of those light constituents was activated by the th[...]![]()
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Cleaning of InP surfaces using electron cyclotron resonance (ECR) nitrogen plasmas has been studied. Electrical performance of Al/SiNx:H/InP structures has been analysed to determine the effect of the plasma cleaning. The SINx:H insulator layers[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2005-05We investigate the influence of the used cleaning method and rapid thermal annealing (RTA) conditions on the electrical characteristics of MIS devices based on SiNy:H/SiOx dielectric stack structures fabricated by electron-cyclotron-resonance pl[...]![]()
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Olea Ariza, Javier ; Algaidy, S. ; Prado Millán, Álvaro del ; García Hemme, Eric ; García Hernansanz, Rodrigo ; Montero, Daniel ; Caudevilla Gutiérrez, Daniel ; González Díaz, Germán ; Soria, E. ; Gonzalo, J. | Elsevier Science SA | 2020-04-15We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below t[...]![]()
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We have analyzed the influence of rapid thermal annealing (from 300 to 1050 degrees C) on the optical properties of a-SiN(x):H. Three compositions were investigated: x = 0.97, x = 1.43 and x = 1.55. Two different behaviors are observed depending[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | The Optical Society Of America | 1992-04-01The refractive index n and the absorption coefficient-alpha of radio frequency sputtered CuGaSe2 and CuInSe2 thin films were obtained by means of transmissivity (T) and reflectivity (R) measurements at normal incidence. The optical properties we[...]![]()
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González Díaz, Germán ; Bernabeu Martínez, Eusebio ; Hernández Rojas, J. L. ; Escudero, J. L. ; Guerrero, H. | American Institute of Physics | 1993-09-01Bulk polycrystalline cadmium manganese telluride, Cd(l-x)Mn(x)Te, was manufactured in several compositions by a synthesis process. The structure of the obtained compounds was the characteristic zinc-blende polycrystalline pattern being the grain[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J. L. ; Lucía Mulas, María Luisa ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | Amer Inst Physics | 1992-07-13An optical spectroscopic study of the plasma produced during rf sputtering of an YBa2Cu3O7-x target was performed to analyze two basic properties of the deposition process: resputtering effects and oxidation mechanisms. Strong emissions of all t[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Amer Inst Physics | 2007-11-05High-k stacks formed by chemical-vapor-deposited SiN and high-pressure sputtered HfO2 in either O-2 or Ar atmosphere have been studied. The introduction of a SiN layer is proposed to prevent the uncontrollable SiO2 growth while sputtering. The f[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2005-12-01The oxygen to silicon ratio of several SiOxHy thin films deposited by the electron cyclotron resonance plasma method was studied by several methods (heavy ion elastic recoil detection analysis, energy dispersive X-ray spectroscopy, Auger spectro[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd | 2008-08-08Hafnium oxide films were deposited on silicon by High Pressure Reactive Sputtering (HPRS) at pressures between 0.8 and 1.6 mbar. Growth, composition and morphology were investigated using Transmission Electron Microscopy (TEM), Heavy Ion Elastic[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer. Inst. Physics | 2005-11We present a study of the physical properties of TiO2 thin films deposited at 200 degrees C on Si by high pressure reactive sputtering, a nonconventional deposition method. Just after deposition, the TiO2 films were in situ annealed in the depos[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The composition (x = [O]/[Si]), hydrogen content, bonding configuration and paramagnetic defects of SiOx films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precurs[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Sociedad Española de Cerámica y Vidrio | 2004-03Se han fabricado estructuras MIS sobre Si (100) mediante un proceso en dos pasos: una primera exposición del sustrato de Si a un plasma ECR de oxígeno, que da lugar a la obtención de una capa de SiOx (en adelante PO-SiOx), seguido de un depósito[...]![]()
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We have investigated the pulse laser melting (PLM) effects on single crystal Gal?. The samples have been studied by means of Raman spectroscopy, glancing incidence X-ray diffraction (GIRXD), van der Pauw and Hall effect measurements. After PLM p[...]![]()
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González Díaz, Germán ; Blanco, N. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Physical Society | 1999-08-15We have studied LO phonon-plasmon coupled modes by means of Raman scattering in n-InP for carrier densities between 6x10(16) and 1x10(19) cm(-3). A line-shape theory based on the Lindhard-Mermin dielectric function that takes into account the no[...]![]()
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In this work we investigate the lattice damage induced in ZnO implanted with potential group V acceptors by means of Raman scattering. ZnO samples were implanted with N and P to hi-h doses and Raman spectra were obtained prior and after rapid th[...]![]()
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González Díaz, Germán ; Martín, J.M. ; Artús, L. ; Cuscó, R. ; Ibañez, J. | American Institute of Physics | 1997-10-15We have studied the lattice recovery by rapid thermal annealing of Si+-implanted InP using Raman spectroscopy. The crystallinity recovery for different annealing temperatures of samples totally amorphized by the implantation can be monitored by [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26The bonding configuration, hydrogen evolution and defect content of rapid thermally annealed (RTA) SiOx:H films of different initial compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films wa[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | AVS Amer Inst. Physics | 2003-07We present a comparative study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using SiN1.55:H or SiN1.55:H/SiOx stacks as gate dielectrics, with the aim of improving the thermal stability of the S[...]