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Autor González Díaz, Germán |
Documentos disponibles escritos por este autor (125)
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2013-08-07In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Hernández Rojas, J.L. ; Lucía Mulas, María Luisa ; Santamaría Sánchez-Barriga, Jacobo ; Sánchez Quesada, Francisco | American Institute of Physics | 1994-03-07Films of CuGaxIn(1-x)Se2 (CGIS) have been grown by rf sputtering from stoichiometric single targets with different Ga/In ratios. Adjusting growth temperature and argon pressure we are able to deposit films with a wide range of Cu contents: From [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo | American Institute of Physics | 1990-06-01Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300?°C amorphous or poorly crystalline Se[...]![]()
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González Díaz, Germán ; Artús, L. ; Blanco, N ; Cuscó, R. ; Hernández, S. | American Institute of Physics | 2003-03-01Raman scattering has been used to study the lattice recovery and electrical activation of Si+-implanted In0.53Ga0.47 As achieved by rapid thermal annealing. The degree of crystallinity recovery, of totally amorphized samples is studied for annea[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2011-06-01We have analyzed the structural and optical properties of Si implanted with very high Ti doses and subsequently pulsed-laser melted (PLM). After PLM, all samples exhibit an abrupt and roughly uniform, box-shaped Ti profile, with a concentration [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-12In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external cir[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2012-11-05We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-m[...]![]()
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González Díaz, Germán ; Artús, L. ; Calleja, E. ; Cuscó, R. ; Iborra, E. ; Jiménez, J. ; Pastor, D. ; Peiró, F. | American Institute of Physics | 2006-08-15We have studied the effects of rapid thermal annealing at 1300 degrees C on GaN epilayers grown on AlN buffered Si(111) and on sapphire substrates. After annealing, the epilayers grown on Si display visible alterations with craterlike morphology[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Fernández, M. | IOP publishing ltd | 1997-12SiNx:H thin films were deposited by the electron cyclotron resonance plasma method at low substrate temperature (200 degrees C) to fabricate metal-insulator-semiconductor devices. The effects of film properties on the electrical characteristics [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | Elsevier Science BV | 2010-11Ti implantation in Si with very high doses has been performed. Subsequent Pulsed Laser Melting (PLM) annealing produces good crystalline lattice with electrical transport properties that are well explained by the Intermediate Band (IB) theory. T[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07We analyze the influence of rapid thermal annealing on Al/SiNx:H/Si structures with a nitrogen to silicon ratio of 1.55 in the insulator bulk. The SiNx:H is deposited by the electron cyclotron resonance plasma method and the films were annealed [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 1999-08-15We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x = 0.97, x = 1.43, and x = 1.55, r[...]![]()
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The influence of rapid thermal annealing treatments on the interface characteristics of Al/SiNx:H/InP devices was analyzed. The insulator was obtained by jan electron cyclotron resonance plasma method at a 200 degrees C-deposition temperature. T[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2002-08-15The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost a[...]