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Autor Prado Millán, Álvaro del |
Documentos disponibles escritos por este autor (59)
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-12In this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external cir[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2012-11-05We have analyzed the increase of the sheet conductance (Delta G(square)) under spectral illumination in high dose Ti implanted Si samples subsequently processed by pulsed-laser melting. Samples with Ti concentration clearly above the insulator-m[...]![]()
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Mártil de la Plaza, Ignacio ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2001-08-01Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance-voltage and current-voltage characteristics) and defect spectroscopy (electro[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Within the framework of the third solar cell generation some new ideas to enlarge the spectral response of the solar cells toward the infrared have been proposed. Among them the inclusion of an Intermediate Band (IB) seems to be very promising. [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | AVS Amer. Inst. Physics | 1999-07We analyze the influence of rapid thermal annealing on Al/SiNx:H/Si structures with a nitrogen to silicon ratio of 1.55 in the insulator bulk. The SiNx:H is deposited by the electron cyclotron resonance plasma method and the films were annealed [...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 1999-08-15We analyze the effect of thermal processes on the optical properties (refractive index, optical gap, Tauc coefficient, and Urbach energy) of SiNx:H films. Films with three different nitrogen to silicon ratios (x = 0.97, x = 1.43, and x = 1.55, r[...]![]()
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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2002-08-15The bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost a[...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; Voz Sánchez, Cristobal ; Gerling, Luis ; Puigdollers, Joaquin ; Alcubilla, R. | Elsevier Science BV | 2018-10Heterojunction solar cells based on molybdenum sub-oxide (MoOx) deposited on n-type crystalline silicon have been fabricated. The hole selective character of MoOx is explained by its high workfunction, which causes a strong band bending in the S[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2011-11-09We assess the degree of crystallinity by means of UV and visible Raman scattering measurements of Ti implanted Si layers with very high doses (10(15)-5 x 10(16) cm(-2)) subsequently annealed by nanosecond pulsed laser melting (PLM). We obtain ul[...]