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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | American Institute of Physics | 2003-12-15The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiOxHy thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH4 and O-2 as precursor gase[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science SA | 2004-07-01The bonding structure and hydrogen content of amorphous hydrogenated silicon nitride (a-SiNx:H) thin films have been investigated by infrared spectroscopy and ion beam techniques. Electron cyclotron resonance plasma enhanced chemical vapor depos[...]texto impreso
Mártil de la Plaza, Ignacio ; San Andres Serrano, Enrique | Sociedad Española de Cerámica y Vidrio | 2004-03En este trabajo se ha caracterizado el proceso de hidrogenación en un plasma generado por resonancia ciclotrónica de electrones de capas de SiGe policristalino obtenidas mediante cristalización en fase sólida y el efecto de la hidrogenación en l[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this work we present a new method to fabricate improved TiO2 films by using a high-pressure sputtering system. In order to minimize the damage induced in the substrate surface by the ion bombardment, a high chamber pressure of 100 Pa is used,[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | IOP publishing ltd | 2005-10Oxide-semiconductor interface quality of high-pressure reactive sputtered (HPRS) TiO2 films annealed in O-2 at temperatures ranging from 600 to 900 degrees C, and atomic layer deposited (ALD) TiO2 films grown at 225 or 275 degrees C from TiCl4 o[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Pergamon-Elsevier Science Ltd. | 2002-09-26Silicon oxynitride films covering the whole composition range from silicon nitride to silicon oxide have been deposited by electron cyclotron resonance chemical vapor deposition from SiH4, O-2 and N-2 gas mixtures. The composition of the films h[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; San Andres Serrano, Enrique | Elsevier Science SA | 2006-10-25The composition of polycrystalline hafnium oxide thin films has been measured by heavy-ion elastic recoil detection analysis (HI-ERDA). The films were deposited by high-pressure reactive sputtering (HPRS) on silicon wafers using an oxygen plasma[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | John Wiley & Sons Ltd. | 2002-08Films of SiOxNy:H were deposited at room temperature on Si substrates by the electron cyclotron resonance (ECR) plasma method. By varying the flow rates of the precursor gases SiH4, O-2. and N-2, the whole composition range between pure silicon [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier | 2004-04The composition of silicon oxynitride (SiOxNy:H) films deposited by electron cyclotron resonance chemical vapour deposition (ECR-CVD) was analysed by ion beam techniques, heavy-ion elastic recoil detection analysis (HI-ERDA) with 150 MeV Kr-86 i[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Inst. Pure Applied Physics | 2004-01An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposi[...]texto impreso
García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Prado Millán, Álvaro del ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | Institute of Electrical and Electronics and Engineers (IEEE) | 2016We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Kluwer Academic Publ. | 2003-05In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor dep[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | IOP publishing ltd | 2001-07A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the [...]texto impreso
Wirths, S. ; Pampillón Arce, María Ángela ; San Andres Serrano, Enrique ; Starge, D. ; Tiedemann, A.T. ; Mussler, G. ; Fox, A. ; Breuer, U. ; Hartmann, J-M. ; Mantl, S. ; Buca, D. | IEEE | 2014Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These [...]texto impreso
Mártil de la Plaza, Ignacio ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | Elsevier Science Ltd | 2006-12The physical and electrical properties of hafnium oxide (HfO2) thin films deposited by high pressure reactive sputtering (HPRS) have been studied as a function of the Ar/O-2 ratio in the sputtering gas mixture. Transmission electron microscopy s[...]
