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Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Polenta, L. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1996-09-15Deep levels in Cd_(1-x)Zn_xTe have not yet been fully characterized and understood, even though this material is very promising for medical and optoelectronic applications. We have investigated p-type semi-insulating Cd_(0.8)Zn_(0.2)Te with cath[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | Elsevier Science SA | 2002-04-30Technological improvement of GaN-based devices for electronic and optoelectronic applications makes essential both monitoring and controlling point and extended defects, which can have detrimental effects in device performance. For gallium nitri[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | Amer Inst Physics | 1997We have investigated the electrical and optical properties of the deep levels responsible for the 1.4-1.5 eV luminescence band usually observed in II-VI compounds. We compared the energy levels found by cathodoluminescence and junction spectrosc[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-02-15The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Castaldini, A. ; Cavallini, A. ; Polent, L. | American Institute of Physics | 2003-12-15The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OB[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Piqueras de Noriega, Javier ; Polenta, L. | IOP publishing ltd | 1996The influence of deep levels on the electrical and optical properties of semiconductors is widely acknowledged. We have utilized several complementary spectroscopic techniques to investigate the deep traps in undoped CdTe, CdTe:Cl and Cd0.8Zn0.2[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12-16The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness stro[...]texto impreso
López, I. ; Castaldini, A. ; Cavallini, A. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | IOP publishing ltd | 2014-10-15The behaviour of ß-Ga?O? nanowires as photoconductive material in deep ultraviolet photodetectors to operate in the energy range 3.0-6.2 eV has been investigated. The nanowires were grown by a catalyst-free thermal evaporation method on gallium [...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Piqueras de Noriega, Javier ; Méndez Martín, Bianchi | IOP publishing ltd | 1994Homogeneity, distribution and nature of defects in GaAs:Te wafers with different doping concentrations have been investigated by SPV (Surface PhotoVoltage) and EBIC (Electron Beam Induced Current) methods. The resulting radial distribution of th[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Piqueras de Noriega, Javier | Elsevier Science SA | 1994-12The disappearance of the electron trap at E_t=E_c-0.82 eV (EL2) level in highly doped samples, observed in the literature for N_D-N_A> 1x10^17 cm^(-3) has been assessed by junction spectroscopy investigations of liquid-encapsulated Czochralski G[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Physical Society | 1997-12-15We study, by cathodoluminescence and junction spectroscopy methods, the deep traps located near midgap in semiconducting and semi-insulating II-VI compounds, namely, undoped CdTe, CdTe:Cl, and Cd0.8Zn0.2Te. In order to understand the role such d[...]texto impreso
Cavallini, A. ; Dupasquier, A. ; Ferro, G. ; Piqueras de Noriega, Javier ; Valli, M. | Trans Tech Publications Ltd | 1997The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most pr[...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Cavallini, A. ; Fraboni, B. | Elsevier Science SA Lausanne | 1994-05Evidence for IR cathodoluminescence (CL) at 1.2 and 1.0 eV in Te-doped GaAs in the temperature range 80-300 K has been obtained. The evolution of CL intensity and half-width of emission bands after silicon implantation and annealing has been inv[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B. ; Piqueras de Noriega, Javier | American Institute of Physics | 1995-12-01We have investigated highly doped GaAs:Te at different doping concentrations (> 10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Castaldini, A. ; Cavallini, A. ; Polenta, L. | American Institute of Physics | 2003-08-15Time-resolved cathodoluminescence (TRCL) and photocurrent (PC) spectroscopies have been applied to the study of the yellow band of Si-doped GaN. Measurements carried out combining both techniques unambiguously reveal the complex nature of this b[...]
