Información del autor
Autor Dieguez, E. |
Documentos disponibles escritos por este autor (50)
texto impreso
Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Piqueras de Noriega, Javier ; Méndez Martín, Bianchi ; Panin, G. N. ; Dutta, P. S. ; Dieguez, E. | I E E E | 1996Cathodoluminescence in the scanning electron microscope is used to ivestigate growth and prosess induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Santos, M. T. ; Remon, A. ; Garcia, J. A. ; Dieguez, E. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-05-01Cathodoluminescence and photoluminescence of Bi_(12)Si_(O)20 and Bi_(12)GeO_(20) samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm [...]texto impreso
Cathodoluminescence and photoluminescence in the core region of Bi_12GeO_20 and Bi_12SiO_20 crystals
Cremades Rodríguez, Ana Isabel ; Santos, M. T. ; Remon, A. ; Garcia, J. A. ; Dieguez, E. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-05-01Cathodoluminescence and photoluminescence of Bi_12SiO_20 and Bi_12GeO_20 samples are studied. Both kinds of samples show a dark orange central part or core. Emissions in the blue, green, and red spectral regions are observed. The 640 nm band is [...]texto impreso
Pal, U ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Amer Inst Physics | 1995-08-01Cathodoluminescence (CL) microscopic techniques have been used to study the spatial distribution of structural defects and the deep levels in CdTe:Ge bulk crystals. The effect of Ge doping with concentrations of 10(17) and 10(19) cm(-3) on the c[...]texto impreso
Chioncel, M.F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Vincent López, José Luis ; Bermudez, V. ; Dieguez, E. | IEEE | 2004The nature and the spatial distribution of radiative defects in In(X)Ga(1-x)Sb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray [...]texto impreso
Hidalgo Alcalde, Pedro ; Plaza, J. L. ; Méndez Martín, Bianchi ; Dieguez, E. ; Piqueras de Noriega, Javier | Institute of Physics | 2002-12-16The luminescence of Te-doped GaSb crystals codoped with Er2O3 has been studied by means of cathodoluminescene (CL) using a scanning electron microscope. Doping with erbium oxide causes a substantial increase of the luminescence intensity of the [...]texto impreso
Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | Elsevier Science SA | 1996-12-15We present the homogeneity and luminescence properties of bulk GaSb obtained by the cathodoluminescence (CL) technique in the scanning electron microscope. The samples used in this study are as-grown undoped and impurity diffused (tellurium) and[...]texto impreso
Pal, U ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. | Materials Research Soc | 1996texto impreso
Méndez Martín, Bianchi ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-10-30The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. CL images have revealed a nonuniform distribution of native defects in GaSb wafers [...]texto impreso
Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Abellá, M. ; Saucedo, E. ; Dieguez, E. | Springer | 2008-08Bi doped and Bi and Yb codoped CdTe crystals grown by the Bridgman method have been characterized by cathodoluminescence (CL) in the scanning electron microscope. CL images show a dense network of highly decorated grain boundaries in the Bi dope[...]texto impreso
Chioncel, M. F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Vincent, J. ; Bermudez, V. ; Dieguez, E. | Elsevier Science B.V. | 2004-07-15The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bridgman method have been studied by cathodoluminescence (CL) in a scanning electron microscope. The CL results have been complemented by X-ray micr[...]texto impreso
Panin, G. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Dieguez, E. | Elsevier Science SA | 1996-12-15The origin and spatial distribution of radiative defects in undoped and Ge-doped CdTe wafers have been studied by CL spectroscopy and imaging techniques in the scanning electron microscope (SEM) before and after the wafer annealing in HgI2 vapor[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Vincent, J. ; Piqueras de Noriega, Javier ; Bermudez, V. ; Dieguez, E. | American Institute of Physics | 2005-01-15The radiative recombination properties of Se-doped GaSb crystals grown by the Bridgman method have been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. A CL band centered at about 765 meV[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Ruiz, C. ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2005-07-25b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature [...]texto impreso
Vincent, J. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Amariei, A. ; Polychronladis, E.K. ; Dieguez, E. | Elsevier Science B.V. | 2006-03-15Undoped and Te-doped GaSb ingots have been grown by the vertical feeding method. The structural, optical and electrical properties of the grown crystals were respectively investigated by X-ray diffraction, transmission electron microscopy, catho[...]texto impreso
Plaza, J. L: ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science B.V. | 2002-06Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value [...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P.S. ; Dieguez, E. | Pergamon-Elsevier Science Ltd | 1998The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous [...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. ; Dieguez, E. | Elsever science BV | 1999-03The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporati[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. ; Dieguez, E. | IOP publishing ltd | 1998-12GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentr[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]texto impreso
Panin, G. N. ; Piqueras de Noriega, Javier ; Sochinskii, N. ; Dieguez, E. | Amer Inst Physics | 1997-02-17The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]texto impreso
Sochinskii, N. V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Agullorueda, F. | IOP publishing ltd | 1995-06Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has bee[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Dieguez, E. | Sociedad Española de Cerámica y Vidrio | 2000-07En este trabajo se ha realizado el estudio de cristales de GaSb crecidos por el método Bridgman y dopados con Er y Nd con distintas concentraciones. Se han realizado análisis de absorción atómica pudiéndose obtener el coeficiente de segregación [...]texto impreso
Sochinskii, N. V. ; Saucedo, E. ; Abellan, M. ; Rodríguez Fernández, José ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Ruiz, C.M. ; Bermudez, V. ; Dieguez, E. | Elsevier Science BV | 2008-04Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were [...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentr[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concent[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Vicent López, José Luis ; Piqueras de Noriega, Javier ; Dieguez, E. | IOP publishing ltd | 2007-01-07The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocat[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | IOP publishing ltd | 1997Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with chromium and vanadium on the native accepters and on the general structure of extended defects of gallium antimonide single[...]texto impreso
Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V. ; Vijayan, N. ; Rodríguez Fernández, J. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Elsevier Science BV | 2009-02-15The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) os[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Dutta, P: S. ; Piqueras de Noriega, Javier ; Dieguez, E. | American Physical Society | 1998-03-15The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal dire[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Remon, A. ; Garcia, J. A. ; Santos, M. T. ; Dieguez, E. | American Institute of Physics | 1998-06-15Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been comp[...]texto impreso
Dutta, P. S. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. ; Bhat, H. L. | Amer Inst Physics | 1996-07-15Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundame[...]texto impreso
The contactless modulation spectroscopy technique of photoreflectance (PR) has been used to study the near band edge transitions in CdTe, CdTe:V and CdTe:Ge bulk crystals in the range of 14 and 400 K for the first time. The lineshape of the PR[...]texto impreso
Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2000-02-14In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis ha[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | American Physical Society | 1999-10-15V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial re[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | American Institute of Physics | 1999-08-01Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has bee[...]texto impreso
Vicent López, José Luis ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science B.V. | 2006-08-01Dilute Te-doped GaSb alloys have been prepared by the vertical feeding method (VFM) using both casting and feeding configurations. The structural and optical properties of the samples were characterized by etching, X-ray diffraction and cathodol[...]texto impreso
Pal, U. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Serrano, M. D. ; Dieguez, E. | IOP publishing ltd | 1994The nature of the 1.4eV band in CdTe is studied by cathodoluminescence. Results indicate that the band is not related only to surface defects.texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]texto impreso
Díaz-Guerra Viejo, Carlos ; Chioncel, M. F. ; Vincent, J ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Wiley-V C H Verlag Gmbh | 2005The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscop[...]texto impreso
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Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Serrano, M. D. ; Dieguez, E. | American Institute of Physics | 1994-09-15Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealin[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2002-04-30The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been a[...]texto impreso
Crocco, J. ; Bensalah, H. ; Zheng, Q. ; Dierre, F. ; Hidalgo Alcalde, Pedro ; Carrascal, J. ; Vela, O. ; Piqueras de Noriega, Javier ; Dieguez, E. | IEEE-Inst Electrical Electronics Engineers Inc | 2011-08The Vertical Gradient Freeze (VGF) method has been used to grow high resistivity Cadmium Zinc Telluride (CZT) for high energy radiation applications. In this work, the effect of lapping and polishing the lateral edges of planar detectors is stud[...]texto impreso
The scope of this paper is to analyse the effect of Au and Cr impurities, diffused onto GaSb substrates on the formation of nanodots created by LEIS using Ar+ ions It is concluded that oblique incidence in rotating configuration delays the forma[...]texto impreso
Vincent López, José Luis ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 2007In this work, the experimental set-up of the Vertical Feeding Method (VFM) which has been used for the preparation of GaSb and GaInSb materials is presented. The different elements of the set-up are detailed as well as the preparation process. T[...]