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Autor Dieguez, E. |
Documentos disponibles escritos por este autor (50)
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Plaza, J. L: ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science B.V. | 2002-06Nd-doped GaSb bulk crystals with three different dopant concentrations have been grown by the vertical Bridgman technique. The axial segregation has been characterised by obtaining the effective segregation coefficient. Differences in the value [...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P.S. ; Dieguez, E. | Pergamon-Elsevier Science Ltd | 1998The effect of aluminium on the defect structure of GaSb crystals, grown by the vertical Bridgman technique, has been investigated by cathodoluminescence (CL) in the scanning electron microscope. Crystals have been found to be highly homogeneous [...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Castaño, J. L. ; Dieguez, E. | Elsever science BV | 1999-03The distribution of Er in bulk GaSb ingots grown by vertical Bridgman technique has been investigated for different concentrations. The resistivity, mobility and carrier density were analysed. The formation of Er-Sb compounds and the incorporati[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. ; Dieguez, E. | IOP publishing ltd | 1998-12GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentr[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | Trans Tech-Scitec Publications LTD | 1998The interest of rare earth doping of semiconductors has increased in the last years due to its possible applications in optical devices requiring temperature stability. Advantages of these systems are the presence of a sharp temperature independ[...]texto impreso
Panin, G. N. ; Piqueras de Noriega, Javier ; Sochinskii, N. ; Dieguez, E. | Amer Inst Physics | 1997-02-17The a?-HgI_2/CdTe:Ce heterostructures have been studied by cathodoluminescence (CL) in the scanning electron microscope. The alpha-HgI2 expitaxial growth was shown to cause an enhancement of the CL intensity in a layer of the substrate extending[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]texto impreso
Sochinskii, N. V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma ; Agullorueda, F. | IOP publishing ltd | 1995-06Undoped and doped CdTe wafers have been thermally annealed in Ga melt, or in Cd vapour or in a vacuum to eliminate Te precipitates from the volume of the wafers. The effect of annealing conditions on the transformation of Te precipitates has bee[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Dieguez, E. | Sociedad Española de Cerámica y Vidrio | 2000-07En este trabajo se ha realizado el estudio de cristales de GaSb crecidos por el método Bridgman y dopados con Er y Nd con distintas concentraciones. Se han realizado análisis de absorción atómica pudiéndose obtener el coeficiente de segregación [...]texto impreso
Sochinskii, N. V. ; Saucedo, E. ; Abellan, M. ; Rodríguez Fernández, José ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Ruiz, C.M. ; Bermudez, V. ; Dieguez, E. | Elsevier Science BV | 2008-04Cadmium telluride (CdTe) crystals and epitaxial layers were grown by the vertical Bridgman method and vapor-phase epitaxy, respectively, to obtain the high-resistive material suitable for X- and gamma-ray detectors. The crystals and layers were [...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentr[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concent[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Vicent López, José Luis ; Piqueras de Noriega, Javier ; Dieguez, E. | IOP publishing ltd | 2007-01-07The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has been investigated by cathodoluminescence (CL) microscopy and spectroscopy in the scanning electron microscope. CL images evidence a high dislocat[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P. S. ; Dieguez, E. | IOP publishing ltd | 1997Cathodoluminescence (CL) in the scanning electron microscope (SEM) has been used to investigate the effect of doping with chromium and vanadium on the native accepters and on the general structure of extended defects of gallium antimonide single[...]texto impreso
Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals
Carcelen, V. ; Vijayan, N. ; Rodríguez Fernández, J. ; Hidalgo Alcalde, Pedro ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Elsevier Science BV | 2009-02-15The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) os[...]