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Autor Dieguez, E. |
Documentos disponibles escritos por este autor (50)
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Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Dutta, P: S. ; Piqueras de Noriega, Javier ; Dieguez, E. | American Physical Society | 1998-03-15The luminescence properties of transition-metal (Cr, V, and Ru)-doped GaSb single crystals have been studied by a cathodoluminescence (CL) technique in a scanning electron microscope. Spatial segregation of impurities along the longitudinal dire[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier ; Remon, A. ; Garcia, J. A. ; Santos, M. T. ; Dieguez, E. | American Institute of Physics | 1998-06-15Changes on the defect structure of Bi12GeO20 (BGO) and Bi12SiO20 (BSO) crystals induced by thermal treatments and laser irradiation have been studied by means of cathodoluminescence in the scanning electron microscope. The results have been comp[...]texto impreso
Dutta, P. S. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. ; Bhat, H. L. | Amer Inst Physics | 1996-07-15Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundame[...]texto impreso
The contactless modulation spectroscopy technique of photoreflectance (PR) has been used to study the near band edge transitions in CdTe, CdTe:V and CdTe:Ge bulk crystals in the range of 14 and 400 K for the first time. The lineshape of the PR[...]texto impreso
Panin, G. N. ; Dutta, P. S. ; Piqueras de Noriega, Javier ; Dieguez, E. | Amer Inst Physics | 1995-12-11Inversion in conductivity type of GaSb from p- to n- has been observed as a result of argon ion beam milling. Electron beam induced current (EBIC) measurements have been employed for detecting the type conversion. Enhancement in the luminescence[...]texto impreso
Dutta, P. S. ; Sreedhar, A. K. ; Bhat, H. L. ; Dubey, G. C. ; Kumar, V. ; Dieguez, E. ; Pal, U. ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-03-15Passivation of point and extended defects in GaSb has been observed as a result of hydrogenated amorphous silicon (a-Si:H) treatment by the glow discharge technique. Cathodoluminescence (CL) images recorded at various depths in the samples clear[...]texto impreso
Plaza, J. L. ; Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science SA | 2000-02-14In this work several changes induced by polishing, chemical etching and thermal treatment in the properties of Er- and Nd-doped GaSb substrates with different doping levels grown by the vertical Bridgman method have been studied. The analysis ha[...]texto impreso
Rodríguez Fernández, J. ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Amer Inst Physics | 2009-08-15Cadmium zinc telluride, CdZnTe, bulk single crystals doped with 10^19 at./cm^3 of indium in the initial melt were grown by vertical Bridgman technique. The samples were investigated by energy dispersive spectroscopy, cathodoluminiscence (CL), an[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | American Physical Society | 1999-10-15V- and Ru-doped GaSb crystals have been investigated by scanning tunneling spectroscopy in a combined scanning electron microscope-scanning tunneling microscope system. Local variations of surface band gap have been measured with high spatial re[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. L. ; Dieguez, E. | American Institute of Physics | 1999-08-01Er doped GaSb single crystals have been studied by scanning tunneling spectroscopy (STS) and cathodoluminescence (CL) in a combined scanning electron microscope-scanning tunnelling microscope system. The surface band gap in doped samples has bee[...]texto impreso
Vicent López, José Luis ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Dieguez, E. | Elsevier Science B.V. | 2006-08-01Dilute Te-doped GaSb alloys have been prepared by the vertical feeding method (VFM) using both casting and feeding configurations. The structural and optical properties of the samples were characterized by etching, X-ray diffraction and cathodol[...]texto impreso
Pal, U. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Serrano, M. D. ; Dieguez, E. | IOP publishing ltd | 1994The nature of the 1.4eV band in CdTe is studied by cathodoluminescence. Results indicate that the band is not related only to surface defects.texto impreso
Rodríguez Fernández, José ; Carcelen, V. ; Hidalgo Alcalde, Pedro ; Vijayan, N. ; Piqueras de Noriega, Javier ; Sochinskii, N. V. ; Pérez, J. M. ; Dieguez, E. | Institute of Physics | 2004-01-21The cathodoluminescence (CL) technique is used to analyse the radiative recombination properties of four distinct silicon carbide (SiC) samples: a 6H-SiC n^+ -type Lely wafer, two off-axis 4H-SiC epitaxial layers of n type and p type, and a (11 [...]texto impreso
Díaz-Guerra Viejo, Carlos ; Chioncel, M. F. ; Vincent, J ; Bermudez, V. ; Piqueras de Noriega, Javier ; Dieguez, E. | Wiley-V C H Verlag Gmbh | 2005The homogeneity and luminescence properties of undoped and Te-doped In_xGa_(1-x)Sb crystals grown by the Bridgman and Vertical Feeding methods have been studied by cathodoluminescence (CL) and X-ray microanalysis in a scanning electron microscop[...]