Título:
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Rapid thermally annealed plasma deposited SiNx : H thin films: Application to metal-insulator-semiconductor structures with Si, In0.53Ga0.47As, and InP
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Prado Millán, Álvaro del ;
San Andres Serrano, Enrique
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2003-08-15
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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We present in this article a comprehensive study of rapid thermal annealing (RTA) effects on the physical properties of SiNx:H thin films deposited by the electron cyclotron resonance plasma method. Films of different as-deposited compositions (defined in this article as the nitrogen to silicon ratio, x=N/Si) were analyzed: from Si-rich (x=0.97) to N-rich (x=1.6) films. The evolution of the composition, bonding configuration, and paramagnetic defects with the annealing temperature are explained by means of different network bond reactions that take place depending on the as-deposited film composition. All the analyzed films release hydrogen, while Si-rich and near-stoichiometric (x=1.43) ones also lose nitrogen upon annealing. These films were used to make Al/SiNx:H/semiconductor devices with Si, In0.53Ga0.47As, and InP. After RTA treatments, the electrical properties of the three different SiNx:H/semiconductor interfaces can be explained, noting the microstructural modifications that SiNx:H experiences upon annealing.
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En línea:
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https://eprints.ucm.es/id/eprint/26119/1/Martil%2C49libre.pdf
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