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Título:
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
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Autores:
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Mártil de la Plaza, Ignacio ;
González Díaz, Germán ;
Prado Millán, Álvaro del ;
San Andres Serrano, Enrique
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Tipo de documento:
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texto impreso
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Editorial:
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Kluwer Academic Publ., 2003-05
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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In this study, a comparative electrical characterization of Al/SiNx/Si and Al/SiNx/SiO2/Si MIS structures has been carried out. Both SiO2 and SiNx films have been deposited by using electron-cyclotron resonance plasma-enhanced chemical vapor deposition method. C-V results show that samples without SiO2 have more defects than those with SiO2. Deep-level transient spectroscopy and conductance transient measurements demonstrate that as for the samples containing the SiO2 film, these defects are mostly concentrated in the insulator/semiconductor interface, whereas in the other case defects are spatially distributed into the insulator.
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En línea:
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https://eprints.ucm.es/id/eprint/26141/1/Martil%2C55.pdf
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