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Autor García Hemme, Eric |
Documentos disponibles escritos por este autor (29)
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García Hemme, Eric | 2011La energía solar fotovoltaica es una de las apuestas más fuertes actuales como opción energética limpia y renovable. El principal objetivo de su desarrollo es el de dar solución a los problemas energéticos del futuro. En la actualidad, diversas [...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Prado Millán, Álvaro del ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | Institute of Electrical and Electronics and Engineers (IEEE) | 2016We have deposited intrinsic amorphous silicon (a-Si:H) using the electron cyclotron resonance (ECR) chemical vapor deposition technique in order to analyze the a-Si:H/c-Si heterointerface and assess the possible application in heterojunction wit[...]![]()
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Pérez, E. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Montero, Daniel ; García Hernansanz, Rodrigo ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-12-28The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2)[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Hindawi Publishing Corporation | 2013In the framework of the third generation of photovoltaic devices, the intermediate band solar cell is one of the possible candidates to reach higher efficiencies with a lower processing cost. In this work, we introduce a novel processing method [...]![]()
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García Hemme, Eric ; Yu, K. M. ; Wahnon, P. ; González Díaz, Germán ; Walukiewicz, W. | American Institute of Physics | 2015-05-04We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ? x ? 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that el[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]![]()
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Castán, Helena ; Pérez, Eduardo ; Dueñas, Salvador ; Bailón, Luis ; Olea Ariza, Javier ; Pastor Pastor, David ; García Hemme, Eric ; Irigoyen Irigoyen, Maite ; González Díaz, Germán | American Institute of Physics (AIP) | 2012Intermediate band silicon solar cells have been fabricated by Titanium ion implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the unimplanted substrate is obtained. In this work we present el[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013We have fabricated titanium and vanadium supersaturated silicon layers on top of a silicon substrate by means of ion implantation and pulsed laser melting processes. This procedure has proven to be suitable to fabricate an intermediate band (IB)[...]![]()
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Pérez, E. ; Castán, H. ; García, H. ; Dueñas, S. ; Bailón, L. ; Montero Álvarez, Daniel ; García-Hernansanz, R. ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-01In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the e[...]![]()
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González Díaz, Germán ; García Hemme, Eric ; Olea Ariza, Javier ; Pastor Pastor, David ; Bailón, L. ; Castán, H. ; Dueñas, S. ; García, H. ; Pérez, E. | American Institute of Physics | 2013-01-14Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. I[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Amer Inst Physics | 2013-07-15We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal tra[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IEEE | 2013Hydrogenated amorphous silicon thin films were deposited using a high pressure sputtering (HPS) system. In this work, we have studied the composition and optical properties of the films (band-gap, absorption coefficient), and their dependence wi[...]![]()
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García Hemme, Eric ; Montero Álvarez, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2016-07-13We report the observation of the insulator-to-metal transition in crystalline silicon samples supersaturated with vanadium. Ion implantation followed by pulsed laser melting and rapid resolidification produce high quality single-crystalline sili[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2012Ti supersaturated Si layers with two different thicknesses have been obtained on the top of a Si substrate by means of ion implantation and pulsed laser melting processes. Time-of-flight Secondary Ion Mass spectrometry (ToF-SIMS) measurements sh[...]![]()
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García Hernansanz, Rodrigo ; García Hemme, Eric ; Montero Álvarez, Daniel ; Olea Ariza, Javier ; San Andres Serrano, Enrique ; Prado Millán, Álvaro del ; Ferrer, F. J. ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP Publishing | 2016-03Amorphous silicon thin films were deposited using the high pressure sputtering (HPS) technique to study the influence of deposition parameters on film composition, presence of impurities, atomic bonding characteristics and optical properties. An[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | Elsevier Science SA | 2012-08-31Si samples implanted with very high Ti doses and subjected to Pulsed-Laser Melting (PLM) have been electrically analyzed in the scope of a two-layer model previously reported based on the Intermediate Band (IB) theory. Conductivity and Hall effe[...]![]()
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García Hernansanz, Rodrigo ; Cimas Cuevas, María Rosa ; Fernández Saez, Pablo Alfredo ; Diego Martínez, Raúl de ; García Hemme, Eric ; Lucía Mulas, María Luisa ; Pastor Pastor, David ; Sánchez Balmaseda, Margarita María | 2021-02-02Este proyecto plantea una mejora de la actividad docente en la asignatura de Fundamentos de Electricidad y Electrónica que se cursa simultáneamente en el primer curso de los grados en Ingeniería Informática, Ingeniería del Software e Ingeniería [...]![]()
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García Hemme, Eric ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del ; Mártil de la Plaza, Ignacio ; González Díaz, Germán | IOP publishing ltd | 2015-02-25This paper presents the results for the transverse conductance across a bilayer formed by supersaturating with diverse transition metals a thin layer of a silicon wafer. The layer is formed by ion implantation and annealed by pulsed laser meltin[...]![]()
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Olea Ariza, Javier ; Algaidy, S. ; Prado Millán, Álvaro del ; García Hemme, Eric ; García Hernansanz, Rodrigo ; Montero, Daniel ; Caudevilla Gutiérrez, Daniel ; González Díaz, Germán ; Soria, E. ; Gonzalo, J. | Elsevier Science SA | 2020-04-15We have fabricated GaP supersaturated with Ti by means of ion implantation and pulsed-laser melting to obtain an intermediate band material with applications in photovoltaics. This material has a strong sheet photoconductance at energies below t[...]![]()
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Esta tesis explora las posibilidades del Si supersaturado con metales de transición como candidato para una nueva generación de fotodetectores de infrarrojo (IR) compatibles con la tecnología CMOS y operados a temperatura ambiente. Los materiale[...]![]()
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González Díaz, Germán ; Pastor, D. ; García Hemme, Eric ; Montero, Daniel ; García Hernansanz, Rodrigo ; Olea Ariza, Javier ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique ; Mártil de la Plaza, Ignacio | Elsevier Sci. Ltd | 2017-02The van der Pauw method to calculate the sheet resistance and the mobility of a semiconductor is a pervasive technique both in the microelectronics industry and in the condensed matter science field. There are hundreds of papers dealing with the[...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Pastor Pastor, David ; Prado Millán, Álvaro del | American Institute of Physics | 2014-05-26We report room-temperature operation of 1 x 1 cm(2) infrared photoconductive photodetectors based on silicon supersaturated with titanium. We have fabricated these Si-based infrared photodetectors devices by means of ion implantation followed by[...]![]()
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Olea Ariza, Javier ; López, E. ; Antolín, E. ; Martí, A. ; Luque, A. ; García Hemme, Eric ; Pastor, D. ; García Hernansanz, Rodrigo ; Prado Millán, Álvaro del ; González Díaz, Germán | IOP publishing ltd | 2016-02-10Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300?K range and the room temperature spectral photoresponse at energies over the [...]![]()
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Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | American Institute of Physics | 2013-08-07In this study, we present a structural and optoelectronic characterization of high dose Ti implanted Si subsequently pulsed-laser melted (Ti supersaturated Si). Time-of-flight secondary ion mass spectrometry analysis reveals that the theoretical[...]