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A model for the diffusion of vector fields driven by external forces is proposed. Using the renormalization group and the epsilon-expansion, the dynamical critical properties of the model with Gaussian noise for dimensions below the critical dim[...]texto impreso
The dynamics of cold bosonic atoms held in an optical lattice can be profoundly modified by using a periodic driving potential to induce the quantum interference effect termed ”coherent destruction of tunneling”. In this way the entanglement and[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plaza, J. ; Dieguez, E. | IOP publishing ltd | 1998-12GaSb single crystals with different Er concentrations have been studied by cathodoluminescence in the scanning electron microscope. Low Er doping has been found to reduce the concentration of native accepters. In crystals with higher Er concentr[...]texto impreso
Hidalgo Alcalde, Pedro ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Dutta, P: S. ; Dieguez, E. | IOP publishing ltd | 1999-10The luminescence properties of In doped GaSb single crystals have been studied by the cathodoluminescence (CL) technique in the scanning electron microscope. It has been found that indium induces a certain reduction on the native acceptor concen[...]texto impreso
Panin, G. N. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | IOP publishing ltd | 1996-09The effect of ion milling on the defect structure of CdTe crystals has been investigated in the scanning electron microscope by cathodoluminescence. Enhancement in the luminescence intensity is observed after ion treatment. Luminescence spectra [...]texto impreso
Lange, E. ; Krupa, K. ; Ameixa, J. ; Barbosa, A. S. ; Pastega, D. F. ; Limao-Vieira, P. ; Bettega, M. H. F. ; Blanco Ramos, Francisco ; García, G. ; Ferreira da Silva, F. | IOP publishing ltd | 2017In the present study joint experimental and theoretical elastic differential cross sections for electron scattering from dichloromethane in the incident electron energy region 7 to 50eV are discussed.texto impreso
Sebastián Franco, José Luis ; Muñoz San Martín, Sagrario ; Sancho Ruíz, Miguel ; Álvarez Galindo, Gabriel ; Miranda Pantoja, José Miguel | IOP publishing ltd | 2007-12-07We have studied the influence of the anisotropic and dispersive nature of the red blood cell structure on the energy absorption and electric field distribution within the cell exposed to electromagnetic fields of frequencies in the range from 50[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Polenta, L. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 2002-12-16The study of the effect of extended defects, present in very large numbers in GaN epilayers, on the material properties and device performance is one of the most important aims of the current research in the field of III nitrides. Thickness stro[...]texto impreso
Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Plugaru, R | IOP publishing ltd | 2003-01Nanocrystalline silicon films, with an average nanocrystal size of about 10 nm, obtained by boron implantation of amorphous silicon layers, have been studied by remote-beam-induced current (REBIC) in a scanning tunnelling microscope (STM) and by[...]texto impreso
Mártil de la Plaza, Ignacio ; García Hemme, Eric ; García Hernansanz, Rodrigo ; González Díaz, Germán ; Olea Ariza, Javier ; Prado Millán, Álvaro del | IOP publishing ltd | 2013-04-03We investigated the electrical transport properties of ultraheavily Ti-implanted silicon layers subsequently pulsed laser melted (PLM). After PLM, the samples exhibit anomalous electrical behaviour in sheet resistance and Hall mobility measureme[...]texto impreso
Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Thin films of hafnium oxide have been deposited by the high-pressure reactive sputtering (HPRS) system. In this growth system the deposition pressure is around 1 mbar, three orders of magnitude higher than in the conventional ones, assuring that[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del ; San Andres Serrano, Enrique | IOP publishing ltd | 2001-07A comparative investigation of the characteristics of the SiNx:H/Si interface has been undertaken by capacitance-voltage measurements and surface photovoltage spectroscopy. By each of these techniques, we have determined the distribution of the [...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Tomashpolsky, Y. Y. ; Sadovskaya, N. V. ; Opagiste, C. | IOP publishing ltd | 1996-09Tl_2Ba-2CuO_(6+?) ceramics have been irradiated in a scanning electron microscope. The resultant changes in the cationic stoichiometry and oxygen content of the samples were investigated by cathodoluminescence (CL), secondary electron emission ([...]texto impreso
Panin, G. N. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | IOP publishing ltd | 1998-06A combined scanning electron microscope-scanning tunnelling microscope (SEM-STM) system has been used to characterize CdxHg1-xTe and CdTe crystals, The electron beam induced current (EBIC) mode of the SEM shows the existence of inhomogeneities i[...]texto impreso
Electrically active defects in epitaxial, n-type, 4H-SiC have been investigated by electron-beam-induced current (EBIC) in the scanning electron microscope. Several defects, mainly nanopipes, 6H polytype inclusions and triangular, carrot-like, d[...]