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Título:
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Study of defects in GaN films by cross-sectional cathodoluminescence
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Autores:
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Zaldivar, M.H. ;
Fernández Sánchez, Paloma ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 1998-03-01
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Cathodoluminescence (CL) in the scanning electron microscope has been used to study cross-sectional samples on GaN epitaxial films grown on sapphire. Increased CL emission, attributed to the presence of stacking faults and decorated dislocations, is observed in a region of the buffer layer close to the film-substrate interface, In the epilayers also a region of enhanced emission is observed which is partially caused by Si doping and in which structural defects are involved. Cross-sectional CL appears as a useful method to reveal features of the spatial distribution of luminescence, not detectable by plan-view measurements.
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En línea:
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https://eprints.ucm.es/id/eprint/26378/1/PiquerasJ193libre.pdf
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