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American Institute of Physics |
Documentos disponibles de esta editorial (326)
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Sotillo Buzarra, Belén ; Escalante, G. ; Radoi, C. ; Muñoz San José, V. ; Piqueras de Noriega, Javier ; Fernández Sánchez, Paloma | American Institute of Physics | 2019-12-14The effect of plastic deformation on the optical and structural properties of ZnSe crystals has been investigated. The optical properties have been monitored by cathodoluminescence measurements as a function of the deformation degree. Remarkable[...]texto impreso
Abdelwahab, Mohamed ; Cruz Dombriz, Álvaro de la ; Dunsby, P.K.S. | American Institute of Physics | 2013We study for the first time a complete analysis of the imprint of tensor anisotropies on the Cosmic Microwave Background for a class of f(R) gravity theories within the CAMB-PPF framework. Herein we present the most relevant equations, both for [...]texto impreso
Llanes Estrada, Felipe José ; Cotanch, Steve ; General, Ignacio ; Wang, Ping | American Institute of Physics | 2008The Coulomb gauge model, involving an effective QCD Hamiltonian in the Coulomb gauge, is applied to scalar hadrons. Mass predictions are presented for both conventional q ¯ q meson and q ¯ qq ¯ q tetra-quark states. Mixing matrix elements betwee[...]texto impreso
Hoshino, M. ; Limao Vieira, P. ; Suga, A. ; Kato, H. ; Ferreira da Silva, F. ; Blanco Ramos, Francisco ; García, G. ; Tanaka, H. | American Institute of Physics | 2015-07-14Absolute differential cross sections (DCSs) for electron interaction with BF3 molecules have been measured in the impact energy range of 1.5-200 eV and recorded over a scattering angle range of 15 degrees-150 degrees. These angular distributions[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Sánchez Quesada, Francisco ; Santamaría Sánchez-Barriga, Jacobo ; Iborra, E. | American Institute of Physics | 1987-11-15Structural, compositional, optical, and electrical properties of CuInSe2thin filmsgrown by rf reactive sputtering from a Se excess target in Ar/H2 atmospheres are presented. The addition of H2 to the sputtering atmospheres allows the control of [...]texto impreso
If dark energy can be described as a perfect fluid, then, apart from its equation of state relating energy density and pressure, we should also especify the corresponding rest frame. Since dark energy is typically decoupled from the rest of comp[...]texto impreso
Castaldini, A. ; Cavallini, A. ; Fraboni, B ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier | American Institute of Physics | 1998-02-15The deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Martín Pacheco, Jaime Miguel ; Castán, E. ; Dueñas, S. | American Institute of Physics | 1995-11-01Current-voltage, small-signal measurements, and deep-level transient spectroscopy (DLTS) spectra of p-n junctions made by Mg implantation into undoped InP are described. The I-V characteristics show that the dominant conduction mechanism at forw[...]texto impreso
González Díaz, Germán ; Martín, J.M. ; Barbolla, J. ; Castán, E. ; Dueñas, S. ; Pinacho, R. ; Quintanilla, L. | American Institute of Physics | 1997-04-01In this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p(+)-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized [...]texto impreso
Díaz-Guerra Viejo, Carlos ; Kurdyukov, D.A. ; Piqueras de Noriega, Javier ; Sokolov, V. I. ; Zamoryanskaya, M. V. | American Institute of Physics | 2001-03-01Synthetic opals-composed of 250 nm amorphous silica spheres closed packed in a face centered cubic structure-have been infilled with silicon, platinum, and with Si and different Pt contents. The luminescent properties of these composites have be[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Castaldini, A. ; Cavallini, A. ; Polent, L. | American Institute of Physics | 2003-12-15The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OB[...]texto impreso
The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is[...]texto impreso
We study the dependence of the ? ? scattering phase shifts on the light quark mass in both standard and unitarized SU(2) Chiral Perturbation Theory (ChPT) to one and two loops. We then use unitarized SU(3) ChPT to study the elastic f(0)(600), k [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-09-15A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution dur[...]texto impreso
Pérez, E. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Montero, Daniel ; García Hernansanz, Rodrigo ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-12-28The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2)[...]texto impreso
Martínez Matos, Óscar ; Calvo Padilla, María Luisa ; Rodrigo Martín-Romo, José Augusto ; Cheben, Pavel ; Monte Muñoz de la Peña, Francisco del | American Institute of Physics | 2007-10-01We report results on the temporal evolution of the diffraction efficiency of volume holographic gratings recorded in a photopolymer glass incorporating Zr-based high refractive index species (HRIS) at molecular level. We record high spatial freq[...]texto impreso
The quasiclassical limit of the scalar nonlocal ?? -problem is derived and a quasiclassical version of the ??-dressing method is presented. Dispersionless Kadomtsev– Petviashvili (KP), modified KP, and dispersionless two- dimensional Toda latt[...]texto impreso
In this work we present a theoretical study on the thermal and electrical conductivities of quasicrystals. By considering a realistic model for the spectral conductivity we derive closed analytical expressions for the transport coefficients whic[...]texto impreso
Campoamor Stursberg, Otto Ruttwig ; Gascon, F.G. ; Peralta-Salas, D. | American Institute of Physics | 2001-12Analytical and geometrical information on certain dynamical systems X is obtained under the assumption that X is embedded into a certain real Lie algebra.texto impreso
Khaderbad, M. A. ; Dhar, S. ; Pérez García, Lucas ; Ploog, K. H. ; Melnikov, A. ; Wieck, A. D. | American Institute of Physics | 2007-08-13The authors have studied the effect of annealing on the magnetic and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300 keV Gd^(3+) ions at room tempera[...]texto impreso
Varela del Arco, M. ; Gómez, Víctor J. ; Grandal, Javier ; Núñez Cascarejo, Arántzazu ; Naranjo, Fernando B. ; Sánchez García, M. A. ; Calleja, E. | American Institute of Physics | 2018-10This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction [...]texto impreso
Matkovic, A. ; Guzmán, R. ; Sánchez Blázquez, P. ; Cardiel López, Nicolás ; Gorgas García, Francisco Javier | American Institute of Physics | 2009We derive ages, metallicities and [alpha/Fe] ratios for dwarf early-type galaxies (dE/dS0) in the center and a region believed to be infalling into the Coma cluster. We find that a set of metallic indices cannot be described by linear relations [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2010-06-01The influence of the silicon nitride blocking layer thickness on the interface state densities (D(it)) of HfO(2)/SiN(x):H gate-stacks on n-type silicon have been analyzed. The blocking layer consisted of 3 to 7 nm thick silicon nitride films dir[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1999-01-15Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observati[...]texto impreso
Navarro, I. ; Pulido, E. ; Crespo del Arco, Patricia ; Hernando Grande, Antonio | American Institute of Physics | 1993-03-15It is shown that the presence of highly anisotropic magnetic precipitates in a soft multiphased matrix can produce a remarkable hardening, even when the volume fraction of the precipitates is small. The exchange coupling between the matrix and t[...]texto impreso
Bruno, F. Y. ; Garcia Barriocanal, Javier ; Torija, M. ; Rivera Calzada, Alberto Carlos ; Sefrioui, Zouhair ; Leighton, C. ; León Yebra, Carlos ; Santamaría Sánchez-Barriga, Jacobo | American Institute of Physics | 2008-02-25Electrical transport properties of heteroepitaxial p-n junctions made of La_(0.8)Sr_(0.2)CoO_(3) and SrTi_(0.99)Nb_(0.01)O_(3) were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20–30[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Albrecht, M. ; Krinke, J. ; Dimitrov, R. ; Stutzmann, M. ; Strunk, H. P. | American Institute of Physics | 2000-03-01Combined electron beam induced current and transmission electron microscopy (TEM) measurements have been performed on both undoped and Si-doped AlGaN epitaxial films with aluminum contents x ranging from x = 0 to x = 0.79, in order to correlate [...]texto impreso
García Hemme, Eric ; Yu, K. M. ; Wahnon, P. ; González Díaz, Germán ; Walukiewicz, W. | American Institute of Physics | 2015-05-04We report the effect of d-levels of vanadium atoms on the electronic band structure of ZnO. Polycrystalline layers of Zn_(1-x)V_(x)O with 0 ? x ? 0.08 were synthesized using magnetron sputtering technique. Electrical measurements show that el[...]texto impreso
We report a study of metal-insulator-semiconductor (MIS) structures on InP. The interfacial state density and deep levels existing in MIS structures were measured by deep level transient spectroscopy (DLTS) technique. The electrical insulator pr[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | American Institute of Physics | 1999-08-15A correlative study of the electrically active grain boundary structure of ZnO polycrystals has been carried out using a scanning electron microscope/scanning tunneling microscope (SEM/STM) combined instrument. Current imaging tunneling spectros[...]texto impreso
Rivera Calzada, Alberto Carlos ; Santamaría Sánchez-Barriga, Jacobo ; León Yebra, Carlos | American Institute of Physics | 2001-01-29We report on complex admittance measurements on ZrO_(2):Y_(2)O_(3) (YSZ) thin films in the parallel plate geometry. Highly textured YSZ thin films, grown by rf sputtering, allow measuring complex admittance free of the effect of charge blocking [...]texto impreso
Fernández Álvarez-Estrada, Ramón ; Calvo Padilla, María Luisa | American Institute of Physics | 1980The scattering of electromagnetic waves by an infinite dielectric cylinder with variable dielectric permeability presents, in general, certain mathematical difficulties regarding the construction of rigorous solutions. We give a new divergencele[...]texto impreso
Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | American Institute of Physics | 1999-02-01In the present work, electron beam induced current (EBIC) has been applied to characterize several kinds of chemical vapor deposition diamond films. Regions of enhanced carrier recombination are detected in plan-view observations of thin films a[...]texto impreso
Schmidt, Rainer ; Basu, A. ; Brinkman, A. W. ; Klusek, Z. ; Datta, P. K. | American Institute of Physics | 2005-02-14The resistance versus temperature (R–T) characteristics of NiMn_(2)O_(4+?) thermistors have been analyzed. In the literature, electron transport in manganate spinels is commonly described by a small-polaron model for nearest neighbor hopping, bu[...]texto impreso
Gómez, I. ; Domínguez-Adame Acosta, Francisco ; Díez, E. ; Bellani, V. | American Institute of Physics | 1999-04-01We study the electron transmission probability in semiconductor superlattices where the height of the barriers is modulated by a Gaussian profile. Such structures act as efficient energy band-pass filters and, contrary to previous designs, it is[...]texto impreso
The Hamiltonian for an electron in Z^2 , interacting with a perpendicular periodic magnetic field, is shown to be gauge equivalent to a periodic Hamiltonian. The wave function of the system is computed in terms of a ground state of the continuou[...]texto impreso
The generalized covariant Dirac equation for a certain five?dimensional universe is studied. If a torsion invariant is included in the free Lagrangian, it is shown that particlelike stable solutions exist having definite positive rest energy, sp[...]texto impreso
Pérez, E. ; Castán, H. ; García, H. ; Dueñas, S. ; Bailón, L. ; Montero Álvarez, Daniel ; García-Hernansanz, R. ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-01In the attempt to form an intermediate band in the bandgap of silicon substrates to give it the capability to absorb infrared radiation, we studied the deep levels in supersaturated silicon with titanium. The technique used to characterize the e[...]texto impreso
ailoring the structure of nanocrystalline microstructures is an important step toward controlled design of novel nanostructured materials and devices. We demonstrate how the nanocrystalline microstructure of Co-rich ribbons can be tuned by annea[...]texto impreso
Perez de Lara, Daniel ; Alija, A. ; González Herrera, Elvira María ; Martín, J. I. ; Vélez, M. ; Colino, J. L. ; Anguita,, J. V. ; Vicent López, José Luis | American Institute of Physics | 2009-03-23Superconducting a-Mo_(3)Si and Nb films have been grown on arrays of Ni nanodots. We have studied the vortex lattice dynamics close to critical temperatures. Different vortex lattice configurations are obtained with the same array unit cell. The[...]texto impreso
Masanes, Lluís ; Müller, M.P. ; Pérez García, David ; Augusiak, Remigiusz | American Institute of Physics | 2014-12We consider a very natural generalization of quantum theory by letting the dimension of the Bloch ball be not necessarily three. We analyze bipartite state spaces where each of the components has a d-dimensional Euclidean ball as state space. In[...]texto impreso
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Tsallis, C. ; Plastino, A.R. ; Fernández Álvarez-Estrada, Ramón | American Institute of Physics | 2009-04Escort mean values or q-moments constitute useful theoretical tools for describing basic features of some probability densities such as those which asymptotically decay like power laws. They naturally appear in the study of many complex dynamica[...]texto impreso
We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the outdiffusion of phosphorus from, the substrate and its, possible incorporation in substitutional positions in. the In0.53Ga0.47As lattice. Raman sig[...]texto impreso
Piqueras de Noriega, Javier ; Díaz-Guerra Viejo, Carlos ; Vila Santos, María | American Institute of Physics | 2010-05-10Exchange anisotropy has been observed and investigated in single-crystalline CuO nanowires grown by thermal oxidation of Cu. The exchange bias field decreases by increasing temperature and can be tuned by the strength of the cooling field. A tra[...]texto impreso
Jones, D. B. ; Neves, R.F.C. ; Lopes, M. C. A. ; da Costa, R.F. ; Varella, M. T. do N. ; Bettega, M. H. F. ; Lima, M. A. P. ; García, G. ; Blanco Ramos, Francisco ; Brunger, M. J. | American Institute of Physics | 2015-12-14We report cross sections for electron-impact excitation of vibrational quanta in furfural, at intermediate incident electron energies (20, 30, and 40 eV). The present differential cross sections are measured over the scattered electron angular r[...]texto impreso
Chiari, Luca ; Zecca, Antonio ; Blanco Ramos, Francisco ; Brunger, M. J. | American Institute of Physics | 2016-02-28Isomerism is ubiquitous in chemistry, physics, and biology. In atomic and molecular physics, in particular, isomer effects are well known in electron-impact phenomena; however, very little is known for positron collisions. Here we report on a se[...]texto impreso
Kholmetskii, Alexsander L. ; Missevitch, Oleg V. ; Smirnov Rueda, Román ; Ivanov, Alexander R. ; Chubykalo, Andrey E. | American Institute of Physics | 2007-01-15We start with the fact that the actual consensus on the empirical verification of the standard retardation condition does not take into account the complex structure of the whole electromagnetic field in the near zone. The most rigorous and meth[...]texto impreso
González Díaz, Germán ; García Hemme, Eric ; Olea Ariza, Javier ; Pastor Pastor, David ; Bailón, L. ; Castán, H. ; Dueñas, S. ; García, H. ; Pérez, E. | American Institute of Physics | 2013-01-14Intermediate band formation on silicon layers for solar cell applications was achieved by titanium implantation and laser annealing. A two-layer heterogeneous system, formed by the implanted layer and by the un-implanted substrate, was formed. I[...]