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Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Castaldini, A. ; Cavallini, A. ; Polent, L. | American Institute of Physics | 2003-12-15The electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OB[...]texto impreso
The structure of defects of SiNx:H films is investigated by electron-spin resonance. It is found that a relaxation process takes place at annealing temperatures below 600 degrees C for those compositions in which the nitrogen-to-silicon ratio is[...]texto impreso
We study the dependence of the ? ? scattering phase shifts on the light quark mass in both standard and unitarized SU(2) Chiral Perturbation Theory (ChPT) to one and two loops. We then use unitarized SU(3) ChPT to study the elastic f(0)(600), k [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have analyzed the electrical properties and bonding characteristics of SiNx:H thin films deposited at 200 degrees C by the electron cyclotron resonance plasma method. The films show the presence of hydrogen bonded to silicon (at the films wit[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier | American Institute of Physics | 2011-09-15A detailed study on the resulting impurity profile in Si samples implanted with high doses of Ti and subsequently annealed by pulsed-laser melting (PLM) is reported. Two different effects are shown to rule the impurity profile redistribution dur[...]texto impreso
Pérez, E. ; Dueñas, S. ; Castán, H. ; García, H. ; Bailón, L. ; Montero, Daniel ; García Hernansanz, Rodrigo ; García Hemme, Eric ; Olea Ariza, Javier ; González Díaz, Germán | American Institute of Physics | 2015-12-28The energy levels created in supersaturated n-type silicon substrates with titanium implantation in the attempt to create an intermediate band in their band-gap are studied in detail. Two titanium ion implantation doses (1013 cm-2 and 1014 cm-2)[...]texto impreso
Martínez Matos, Óscar ; Calvo Padilla, María Luisa ; Rodrigo Martín-Romo, José Augusto ; Cheben, Pavel ; Monte Muñoz de la Peña, Francisco del | American Institute of Physics | 2007-10-01We report results on the temporal evolution of the diffraction efficiency of volume holographic gratings recorded in a photopolymer glass incorporating Zr-based high refractive index species (HRIS) at molecular level. We record high spatial freq[...]texto impreso
The quasiclassical limit of the scalar nonlocal ?? -problem is derived and a quasiclassical version of the ??-dressing method is presented. Dispersionless Kadomtsev– Petviashvili (KP), modified KP, and dispersionless two- dimensional Toda latt[...]texto impreso
In this work we present a theoretical study on the thermal and electrical conductivities of quasicrystals. By considering a realistic model for the spectral conductivity we derive closed analytical expressions for the transport coefficients whic[...]texto impreso
Campoamor Stursberg, Otto Ruttwig ; Gascon, F.G. ; Peralta-Salas, D. | American Institute of Physics | 2001-12Analytical and geometrical information on certain dynamical systems X is obtained under the assumption that X is embedded into a certain real Lie algebra.texto impreso
Khaderbad, M. A. ; Dhar, S. ; Pérez García, Lucas ; Ploog, K. H. ; Melnikov, A. ; Wieck, A. D. | American Institute of Physics | 2007-08-13The authors have studied the effect of annealing on the magnetic and the structural properties of Gd focused ion beam implanted GaN samples. Molecular beam epitaxy grown GaN layers, which were implanted with 300 keV Gd^(3+) ions at room tempera[...]texto impreso
Varela del Arco, M. ; Gómez, Víctor J. ; Grandal, Javier ; Núñez Cascarejo, Arántzazu ; Naranjo, Fernando B. ; Sánchez García, M. A. ; Calleja, E. | American Institute of Physics | 2018-10This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction [...]texto impreso
Matkovic, A. ; Guzmán, R. ; Sánchez Blázquez, P. ; Cardiel López, Nicolás ; Gorgas García, Francisco Javier | American Institute of Physics | 2009We derive ages, metallicities and [alpha/Fe] ratios for dwarf early-type galaxies (dE/dS0) in the center and a region believed to be infalling into the Coma cluster. We find that a set of metallic indices cannot be described by linear relations [...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Prado Millán, Álvaro del | American Institute of Physics | 2010-06-01The influence of the silicon nitride blocking layer thickness on the interface state densities (D(it)) of HfO(2)/SiN(x):H gate-stacks on n-type silicon have been analyzed. The blocking layer consisted of 3 to 7 nm thick silicon nitride films dir[...]texto impreso
Zaldivar, M.H. ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Solís, J. | American Institute of Physics | 1999-01-15Pulsed laser treatments have been performed in GaN samples of both n- and p-type conductivity. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Emissive mode observati[...]