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Mártil de la Plaza, Ignacio ; González Díaz, Germán ; García, S. ; Castán, E. ; Dueñas, S. ; Fernández, M. | American Institute of Physics | 1998-01-01We have obtained Al/SiNx:H/InP metal-insulator-semiconductor devices depositing SiNx:H thin films by the electron cyclotron resonance plasma method at 200 degrees C. The electrical properties of the structures were analyzed according to capacita[...]texto impreso
Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | American Institute of Physics | 2005Micro- and nanotubes, and other elongated structures of SnO_2 as wires and rods, were grown after sintering in argon flow at temperatures ranging from 1350 degrees C to 1500 degrees C. The morphology and luminescence properties of these structur[...]texto impreso
Maestre Varea, David ; Cremades Rodríguez, Ana Isabel ; Piqueras de Noriega, Javier | American Institute of Physics | 2005-02-15Sintering SnO_2 under argon flow at temperatures in the range of 1350-1500 degreesC causes the formation of wires, rods, and tubes on the sample surface. At high temperatures of the mentioned range, microwires with lengths of hundreds of microns[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentr[...]texto impreso
Carcelen, V. ; Hidalgo Alcalde, Pedro ; Rodríguez Fernández, J. ; Dieguez, E. | American Institute of Physics | 2010-05-01The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concent[...]texto impreso
Antoranz Canales, Pedro ; Miranda Pantoja, José Miguel ; Sebastián Franco, José Luis ; Cámara, M. ; Fonseca González, Mª Victoria | American Institute of Physics | 2005-05-01We report on this work a model to accurately predict the electrical behavior of double-heterostructure GaN/SiC blue light-emitting diodes up to microwave frequencies. A procedure to extract the series resistance (R-s) from the reflection coeffic[...]texto impreso
Marín Palacios, María Pilar ; Marcos, M. ; Hernando Grande, Antonio | American Institute of Physics | 2010-06-28In this letter, we report the experimental work carried out to study and improve the magnetomechanical coupling on magnetic microwires. A good magnetoelastic response, with magnetoelastic coupling factor k=0.43, has been obtained by control of b[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Lucía Mulas, María Luisa ; San Andres Serrano, Enrique | American Institute of Physics | 2007-08-15Hafnium oxide films were deposited by high pressure reactive sputtering using different deposition pressures and times. The composition, morphology, and optical properties of the films, together with the sputtering process growth kinetics were i[...]texto impreso
Si implantations into undoped In0.53Ga0.47As have been carried out to obtain n-layers suitable for device applications. Different doses and energies have been analyzed. After rapid thermal annealing at 850-875 degrees C for 10-20 s, electrical a[...]texto impreso
Mártil de la Plaza, Ignacio ; González Díaz, Germán ; Olea Ariza, Javier ; San Andres Serrano, Enrique | American Institute of Physics | 2010-05-15In this paper, we present a detailed characterization of high quality layers of Si implanted with Ti at high doses. These layers are intended to the formation of an intermediate band (IB) solar cell. The main requirement to obtain an IB material[...]texto impreso
Martínez Arnáiz, R. M. ; Maldonado, J. ; Montes Gutiérrez, David ; Eiroa, C. ; Montesinos, B. ; Ribas, I. ; Solano, E. | American Institute of Physics | 2009We present the most recent results of our ongoing long-term high resolution spectroscopic study of nearby (d ? 25 pc) FGK stars which aim is to characterize the local properties of the Galaxy, in particular the star-formation history. A through [...]texto impreso
Ruiz Gómez, Sandra ; González Barrio, Miguel Ángel ; Mascaraque Susunaga, Arantzazu ; Pérez García, Lucas ; Serrano, Aída ; Guerrero, Rubén ; Muñoz, Manuel ; Lucas, Irene ; Foerster, Michael ; Aballe, Lucía | American Institute of Physics | 2018-10-22The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0.5% Bi grown by sputtering, and larger valu[...]texto impreso
Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier | American Institute of Physics | 1996-07-15Cathodoluminescence (CL) of YBa_2Cu_3O_(7-x) single crystals has been investigated in the scanning electron microscope, Some regions of the crystals, generally related to steps or other growth features, show enhanced CL Intensity. Spectra show t[...]texto impreso
Junge, M. ; Palazuelos Cabezón, Carlos ; Parcet, J. ; Perrin, M. | American Institute of Physics | 2015-02We obtain hypercontractivity estimates for a large class of semigroups defined on finite-dimensional matrix algebras Mn. These semigroups arise from Poisson-like length functions ? on Zn × Zn and provide new hypercontractive families of quantum [...]texto impreso
Crespo del Arco, Patricia ; Marín, P. ; Hernando Grande, Antonio | American Institute of Physics | 2000-05-01We present experimental results on the hysteresis and relaxation of Fe/Ba hexaferrite composite samples prepared by ball milling starting from precursor Fe and Ba hexaferrite particles. Our results show that, for maximum applied fields of up to [...]