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Título:
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Selectively excited photoluminescence from Eu-implanted GaN
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Autores:
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Wang, K. ;
Martin, R. W. ;
O’Donnell, K. P. ;
Katchkanov, V. ;
Nogales Díaz, Emilio ;
Lorenz, K. ;
Alves, E. ;
Ruffenach, S. ;
Briot, O.
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Tipo de documento:
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texto impreso
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Editorial:
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American Institute of Physics, 2005-09-12
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Materia = Ciencias: Física: Física del estado sólido
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Tipo = Artículo
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Resumen:
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The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescence (PL) and PL excitation (PLE) studies reveal a variety of Eu centers with different excitation mechanisms. High- resolution PL spectra at low temperature clearly show that emission lines ascribed to ?D?-?F? (similar to 622 nm), ?D?-?F? (similar to 664 nm), and ?D?-?F? (similar to 602 nm) transitions ach consist of several peaks. PL excitation spectra of the spectrally resolved components of the ?D?-?F? multiplet contain contributions from above-bandedge absorption by the GaN host, a GaN exciton absorption at 356 nm, and a broad subedge absorption band centred at similar to 385 nm. Marked differences in the shape of the ?D?-?F? PL multiplet are demonstrated by selective excitation via the continuum/exciton states and the below gap absorption band. The four strongest lines of the multiplet are shown to consist of two pairs due to different Eu3+ centers with different excitation mechanisms.
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En línea:
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https://eprints.ucm.es/45327/1/NogalesD%C3%ADazE%2008%20%20LIBRE.pdf
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