|
Título:
|
Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation
|
|
Autores:
|
Cavallini, A. ;
Dupasquier, A. ;
Ferro, G. ;
Piqueras de Noriega, Javier ;
Valli, M.
|
|
Tipo de documento:
|
texto impreso
|
|
Editorial:
|
Trans Tech Publications Ltd, 1997
|
|
Palabras clave:
|
Estado = Publicado
,
Materia = Ciencias: Física: Física de materiales
,
Tipo = Sección de libro
|
|
Resumen:
|
The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.
|
