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Wang, K. ; Martin, R. W. ; Nogales Díaz, Emilio ; Edwards, P. R. ; O’Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Watson, I. M. | American Institute of Physics | 2006-09-25AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broade[...]texto impreso
Wang, K. ; Martin, R. W. ; O’Donnell, K. P. ; Katchkanov, V. ; Nogales Díaz, Emilio ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2005-09-12The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescen[...]texto impreso
O'Donnell, KP ; Katchkanova, V. ; Wang, K. ; Martin, R.W. ; Edwards, P.R. ; Hourahine, B. ; Nogales Díaz, Emilio ; Mosselmans, J.F.W. ; De Vries, B. | Materials Research Society | 2005This presentation reviews recent lattice location studies of rare earth (RE) ions in GaN by electron emission channelling (EC) and X-ray absorption fine structure (XAFS) techniques. These studies agree that RE ions at low concentrations (whether[...]
