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Wang, K. ; Martin, R. W. ; Nogales Díaz, Emilio ; Edwards, P. R. ; O’Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Watson, I. M. | American Institute of Physics | 2006-09-25AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broade[...]texto impreso
Nogales Díaz, Emilio ; Hidalgo Alcalde, Pedro ; Lorenz, K. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. | IOP publishing ltd | 2011-07-15Rare earth (RE) doped gallium oxide and germanium oxide micro- and nanostructures, mostly nanowires, have been obtained and their morphological and optical properties have been characterized. Undoped oxide micro- and nanostructures were grown by[...]texto impreso
Nogales Díaz, Emilio ; López, I. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. ; García, J.A. | Spie-Int Soc Optical Engineering | 2012Monoclinic gallium oxide, beta-Ga_2O_3, is a transparent conducting oxide (TCO) that presents one of the widest band gaps among this family of materials. Its characteristics make it highly interesting for applications in UV - visible - IR optoel[...]texto impreso
Catarino, N. ; Nogales Díaz, Emilio ; Franco, N. ; Darakchieva, V. ; Miranda, S.M.C. ; Méndez Martín, Bianchi ; Alves, E. ; Marques, J.F. ; Lorenz, K. | EPL Association, European Physical Society | 2012-03The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, [...]texto impreso
Nogales Díaz, Emilio ; Martin, R. V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2006-01-16The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps pr[...]texto impreso
Lorenz, K. ; Nogales Díaz, Emilio ; Nédélec, R. ; Penner, J. ; Vianden, R. ; Alves, E. ; Martin, R.W. ; O`Donnell, K.P. | Materials Research Soc | 2006GaN films were implanted with Er and Eu ions and rapid thermal annealing was performed at 1000, 1100 and 1200 ?C in vacuum, in flowing nitrogen gas or a mixture of NH? and N?. Rutherford backscattering spectrometry in the channeling mode was use[...]texto impreso
Peres, Marco ; Fernandes, A.J.S. ; Oliveira, F.J. ; Alves, L.C. ; Alves, E. ; Monteiro, T.S. ; Cardoso, S. ; Alonso Orts, Manuel ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi | Electrochemical Society | 2019-06-24A thermal actuator based on thin flexible lamellas of Ga_2O_3 was designed in order to demonstrate the potential of this semiconductor for micro-opto-electro-mechanical applications (MOEMs). The working principle of these devices is based on the[...]texto impreso
Wang, K. ; Martin, R. W. ; O’Donnell, K. P. ; Katchkanov, V. ; Nogales Díaz, Emilio ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2005-09-12The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescen[...]texto impreso
López, Iñaqui ; Lorenz, K. ; Nogales Díaz, Emilio ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Alves, E. ; Garcia, J. A. | Springer | 2014-02A systematical analysis of the correlation between the crystalline quality and the luminescence of rare-earth-implanted ß-Ga_2O_3 nanostructures with potential applications in visible and ultraviolet photonics is presented. Europium ions led to [...]texto impreso
Nogales Díaz, Emilio ; Garcia, J. A. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Lorenz, K. ; Alves, E. | IOP publishing ltd | 2008-03-20The luminescence properties of Er doped ?-Ga_2O_3 and of the erbium gallium garnet Er_3 Ga_5O_12(ErGG) have been investigated both in the visible and in the infrared (IR) ranges by means of photoluminescence (PL). Doping of the ?-Ga_2O_3 was obt[...]
