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Nogales Díaz, Emilio ; Martin, R. V. ; O'Donnell, K. P. ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2006-01-16The structural properties of nanometric AlN caps, grown on GaN to prevent dissociation during high temperature annealing after Eu implantation, have been characterized by scanning electron microscopy and electron probe microanalysis. The caps pr[...]texto impreso
Wang, K. ; Martin, R. W. ; O’Donnell, K. P. ; Katchkanov, V. ; Nogales Díaz, Emilio ; Lorenz, K. ; Alves, E. ; Ruffenach, S. ; Briot, O. | American Institute of Physics | 2005-09-12The intensity of Eu-related luminescence from ion-implanted GaN with a 10 nm thick AlN cap, both grown epitaxially by metal organic chemical vapor deposition (MOCVD) is increased markedly by high-temperature annealing at 1300 ?C. Photoluminescen[...]
