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Velazco, Raoul | 2013-06-07This work presents an approach to predict the error rate due to Single Event Upsets (SEU), which are errors changing de content of memory cells, occurring in programmable circuits as the consequence of the impact of an energetic particle (heavy [...]texto impreso
Ramos, Pablo ; Vargas, Vanessa ; Baylac, Maud ; Villa, Francesca ; Rey, Solenne ; Clemente Barreira, Juan Antonio ; Zergainoh, Nacer-Eddine ; Méhaut, Jean-François ; Velazco, Raoul | IEEE Nuclear and Plasma Sciences Society | 2016-07-12The aim of this work is to evaluate the SEE sensitivity of a multi-core processor having implemented ECC and parity in their cache memories. Two different application scenarios are studied. The first one configures the multi-core in Asymmetric M[...]texto impreso
Velazco, Raoul ; Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Mansour, Wassim ; Palomar Trives, Carlos ; Franco Peláez, Francisco Javier ; Baylac, Maud ; Rey, Solenne ; Rosetto, Olivier ; Villa, Francesca | IEEE-Inst Electrical Electronics Engineers Inc | 2014-12Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and DRAM capacitors to determine if, as claimed, it is soft-error free and to estimate upper bounds for the cross-section.[...]texto impreso
Clemente Barreira, Juan Antonio ; Mansour, Wassim ; Ayoubi, Rafic ; Serrano, Felipe ; Mecha López, Hortensia ; Ziade, Haissam ; El Falou, Wassim ; Velazco, Raoul | Elsevier | 2016-01-01This letter presents an FPGA implementation of a fault-tolerant Hopfield NeuralNetwork (HNN). The robustness of this circuit against Single Event Upsets (SEUs) and Single Event Transients (SETs) has been evaluated. Results show the fault toleran[...]texto impreso
Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Mecha López, Hortensia ; Velazco, Raoul | IEEE | 2019-03-01After having carried out radiation experiments on memories, the detected bitflips must be classified into single bit upsets and multiple events to calculate the cross sections of different phenomena. There are some accepted procedures to determi[...]texto impreso
Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Korkian, Golnaz ; Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2020In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estim[...]texto impreso
Velazco, Raoul | 2014-05-21Los progresos en las tecnologías de fabricación de circuitos integrados se traducen en un aumento potencial de la sensibilidad a los efectos de las partículas (neutrones, protones, iones pesados…) presentes en el entorno en que funcionan. Los pu[...]texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Vila, Francesca ; Baylac, Maud ; Ramos Vargas, Pablo Francisco ; Vargas Vallejo, Vanessa Carolina ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2015-09-18This paper presents an experimental study of the sensitivity to 15-MeV neutrons at low bias voltage of advanced low-power SRAMs by Renesas Electronics. The most interesting results are the occurrence of clusters of bitflips, hard errors only vis[...]texto impreso
Franco Peláez, Francisco Javier ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2007-01-31This paper describes a field test system to evaluate the sensitivity of SRAMs to the natural radiation coming from the interaction of cosmic rays with the atmosphere. Unlike other experiments, this system is optimized to be portable and autonomo[...]texto impreso
Clemente Barreira, Juan Antonio ; Hubert, Guillaume ; Franco Peláez, Francisco Javier ; Vila, Francesca ; Baylac, Maud ; Puchner, Helmut ; Velazco, Raoul ; Mecha López, Hortensia | IEEE-Inst Electrical Electronics Engineers Inc | 2017-08-01This paper presents the characterization of the sensitivity to 14-MeV neutrons of a Commercial Off-The-Shelf (COTS) 90-nm Static Random Access Memories (SRAMs) manufactured by Cypress Semiconductor, when biased at ultra low voltage. Firstly, exp[...]texto impreso
Clemente Barreira, Juan Antonio ; Hubert, Guilaume ; Fraire, Juan ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Rey, Solenne ; Baylac, Maud ; Puchner, Helmut ; Mecha, Hortensia ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2018-02-01This paper presents a SEU sensitivity characterization at ultra-low bias voltage of three generations of COTS SRAMs manufactured in 130 nm, 90 nm and 65 nm CMOS processes. For this purpose, radiation tests with 14.2 MeV neutrons were performed f[...]texto impreso
New generation electronic devices have become more and more sensitive to the effects of the natural radiation coming from the surrounding environment. These radiation sources are cosmic rays and radioactive impurities, able to corrupt the conten[...]texto impreso
Fabero Jiménez, Juan Carlos ; Mecha López, Hortensia ; Franco Peláez, Francisco Javier ; Clemente Barreira, Juan Antonio ; Korkian, Golnaz ; Rey, Solenne ; Cheymol, Benjamin ; Baylac, Maud ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2020A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and [...]texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Baylac, Maud ; Ramos Vargas, Pablo Francisco ; Vargas Vallejo, Vanessa Carolina ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2016-08-16This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characteri[...]texto impreso
Clemente Barreira, Juan Antonio ; Franco Peláez, Francisco Javier ; Villa, Francesca ; Rey, Sole ; Baylac, Maud ; Mecha López, Hortensia ; Agapito Serrano, Juan Andrés ; Puchner, Helmut ; Hubert, Guillaume ; Velazco, Raoul | IEEE-Inst Electrical Electronics Engineers Inc | 2015-09-18This paper presents an approach to discern MCUs from SEUs in SRAM memories. Experiments involving radiation tests with 14-MeV neutrons on two successive generations (130 and 90 nm) of Cypress devices are presented.
