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Título:
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Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
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Autores:
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Catarino, N. ;
Nogales Díaz, Emilio ;
Franco, N. ;
Darakchieva, V. ;
Miranda, S.M.C. ;
Méndez Martín, Bianchi ;
Alves, E. ;
Marques, J.F. ;
Lorenz, K.
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Tipo de documento:
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texto impreso
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Editorial:
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EPL Association, European Physical Society, 2012-03
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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The implantation damage build-up and optical activation of a-plane and c-plane GaN epitaxial films were compared upon 300 keV Eu implantation at room temperature. The implantation defects cause an expansion of the lattice normal to the surface, i.e. along the a-direction in a-plane and along the c-direction in c-plane GaN. The defect profile is bimodal with a pronounced surface damage peak and a second damage peak deeper in the bulk of the samples in both cases. For both surface orientations, the bulk damage saturates for high fluences. Interestingly, the saturation level for a-plane GaN is nearly three times lower than that for c-plane material suggesting very efficient dynamic annealing and strong resistance to radiation. a-plane GaN also shows superior damage recovery during post-implant annealing compared to c-plane GaN. For the lowest fluence, damage in a-plane GaN was fully removed and strong Eu-related red luminescence is observed. Although some residual damage remained after annealing for higher fluences as well as in all c-plane samples, optical activation was achieved in all samples revealing the red emission lines due to the ^5Do -> ^7F_2transition in the Eu_3+ ion. The presented results demonstrate a great promise for the use of ion beam processing for a-plane GaN based electronic devices as well as for the development of radiation tolerant electronics.
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En línea:
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https://eprints.ucm.es/id/eprint/23992/1/MendezBianchi04.pdf
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