Título:
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Microwave noise modeling of InP based MODFETs biased for low power consumption
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Autores:
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Miranda Pantoja, José Miguel ;
Sebastián Franco, José Luis
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Tipo de documento:
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texto impreso
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Editorial:
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IEEE-Inst Electrical Electronics Engineers Inc, 2000-11
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/restrictedAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Electricidad
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Materia = Ciencias: Física: Electrónica
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Tipo = Artículo
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Resumen:
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This paper presents the fabrication, experimental characterization and modeling of 0.15 mum gate-length lattice matched MODFETs based on InP technology. The variation of the drain noise temperature of the Pospieszalski model (T-D) with the applied bias has been investigated under very low power consumption conditions, and a noticeably complex dependence of this factor on the drain current has been observed, In fact, T-D can decrease with increasing drain currents, and suffers a strong increase as a function of the drain voltage even at very low values of the drain current. However, all of these effects can be qualitatively explained from physical considerations.
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En línea:
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https://eprints.ucm.es/id/eprint/24709/1/MirandaJM102.pdf
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