Título:
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Scanning electron acoustic microscopy of indium-doped semi-insulating GaAs
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Autores:
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Méndez Martín, Bianchi ;
Piqueras de Noriega, Javier
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Tipo de documento:
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texto impreso
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Editorial:
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IOP publishing ltd, 1993-03
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Dimensiones:
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application/pdf
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Nota general:
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info:eu-repo/semantics/openAccess
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Idiomas:
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Palabras clave:
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Estado = Publicado
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Materia = Ciencias: Física: Física de materiales
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Tipo = Artículo
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Resumen:
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Dislocation lines in {110} sections of In-doped GaAs are imaged by scanning electron acoustic microscopy (SEAM). Cathodoluminescence measurements show the presence of a high indium concentration at dislocations. It is proposed that the semi-insulating property of the sample and dislocation decoration contribute to the SEAM contrast.
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En línea:
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https://eprints.ucm.es/id/eprint/25042/1/MendezBianchi76.pdf
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