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Chioncel, M. F. ; Díaz-Guerra Viejo, Carlos ; Piqueras de Noriega, Javier ; Duhanian, N. ; Duffar, T. | natl Inst Optoelectronics | 2004-03Low band-gap InGaSb crystals are of interest for the development of thermo-photo-voltaic (TPV) cells and other devices operating in the infrared spectral range. In this work, cathodoluminescence (CL) in the scanning electron microscope (SEM) has[...]texto impreso
Nogales Díaz, Emilio ; Montone, A. ; Cardellini, F. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2002-12The processes of the characteristic radiative transition of Er3+ ions involved in optically active centers in nano-crystalline silicon have been studied by photo-luminescence (PL) and cathodo-luminescence (CL). Infrared emission is observed in c[...]texto impreso
Cheze, C. ; Méndez Martín, Bianchi ; Piqueras de Noriega, Javier ; Corregidor, V. | natl Inst Optoelectronics | 2006-02Quaternary Ga_(1-x)In_xAs_ySb_(1-y) layers lattice matched to a GaSb substrate are of interest for applications in the infrared range. In this work, the luminescence of Ga_(1-x)In_xAs_ySb_(1-y) layers grown on GaSb by metal organic vapor phase e[...]texto impreso
Urbieta Quiroga, Ana Irene ; Fernández Sánchez, Paloma ; Piqueras de Noriega, Javier ; Vasco, E. ; Zaldo, C. | natl Inst Optoelectronics | 2004-03Scanning tunnelling microscopy and spectroscopy have been used to characterize electrically active grain boundaries in pulsed laser deposited ZnO films with grain sizes in the range 216-500 nm. The p-type behaviour at the boundary is evidenced b[...]texto impreso
Fernández Sánchez, Paloma ; Solís, J. ; Piqueras de Noriega, Javier | natl Inst Optoelectronics | 2000-09Pulsed laser treatments in air and in vacuum have been performed in CdTe wafers. The laser induced changes have been monitored by emissive mode and cathodoluminescence (CL) in a scanning electron microscope. Remarkable differences between the ef[...]
